TY - JOUR
T1 - Si-SiO 2 interface formation in low-dose low-energy separation by implanted oxygen materials
AU - Jutarosaga, Tula
AU - Manne, Srinivas
AU - Seraphin, Supapan
N1 - Funding Information:
The authors would like to thank Dr. Jun Sik Jeoung for sharing some of his TEM results. This work was supported by the National Science Foundation under grant numbers DMR0072955 and 0094385.
PY - 2005/8/31
Y1 - 2005/8/31
N2 - The evolution of the Si-SiO 2 interface morphology of low-dose low-energy separation by implanted oxygen materials was investigated by transmission electron microscopy and atomic force microscopy. The Si-SiO 2 interface morphology and the RMS roughness are strongly affected by the implantation conditions and the annealing process. Three main types of the domains including round, square, and pyramid shapes with the step-terrace structure were observed on the buried SiO 2 surface. Round domains are observed in the early stage of the annealing process, while the square and pyramid domains are observed after the high temperature annealing. The mean RMS roughness decreases with increasing time and annealing temperature, while in the 1350 °C 4-h annealed samples, the mean RMS roughness decreases with either increasing the implantation dose or decreasing implantation energy. The scaling analysis shows that the Si-SiO 2 interfaces were found to be self-affine on the short length scales with a roughness exponent above 0.50. Qualitative mechanisms of Si-SiO 2 surface flattening are presented in terms of the variations of morphological features with the processing conditions.
AB - The evolution of the Si-SiO 2 interface morphology of low-dose low-energy separation by implanted oxygen materials was investigated by transmission electron microscopy and atomic force microscopy. The Si-SiO 2 interface morphology and the RMS roughness are strongly affected by the implantation conditions and the annealing process. Three main types of the domains including round, square, and pyramid shapes with the step-terrace structure were observed on the buried SiO 2 surface. Round domains are observed in the early stage of the annealing process, while the square and pyramid domains are observed after the high temperature annealing. The mean RMS roughness decreases with increasing time and annealing temperature, while in the 1350 °C 4-h annealed samples, the mean RMS roughness decreases with either increasing the implantation dose or decreasing implantation energy. The scaling analysis shows that the Si-SiO 2 interfaces were found to be self-affine on the short length scales with a roughness exponent above 0.50. Qualitative mechanisms of Si-SiO 2 surface flattening are presented in terms of the variations of morphological features with the processing conditions.
KW - Atomic force microscopy
KW - Scaling analysis
KW - Self-affine scaling
KW - Separation by implanted oxygen materials
KW - Si-SiO interfaces
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U2 - 10.1016/j.apsusc.2004.12.045
DO - 10.1016/j.apsusc.2004.12.045
M3 - Article
AN - SCOPUS:23844448421
VL - 250
SP - 168
EP - 181
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -