Abstract
The design of semiconductor-based unstable resonators with laterally finite mirrors is investigated. A time-independent model used for tapered cavity semiconductor lasers is implemented to analyze this cavity design. Initial investigations show a significant improvement in external quantum efficiency, as well as a decrease in threshold current density as compared to the traditional tapered lasers with laterally infinite mirrors. The advantages and disadvantages of the proposed design will be discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 716-723 |
| Number of pages | 8 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 38 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 2002 |
Keywords
- Finite mirror
- High power
- Semiconductor laser
- Tapered gain section
- Unstable
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering