Semiconductor quantum-well designer active materials

J. Hader; A. R. Zakharian; J. V. Moloney; T. R. Nelson; W. J. Siskaninetz; J. E. Ehret; K. Hantke; S. W. Koch; M. Hofmann

doi:10.1364/opn.13.12.000022

Semiconductor quantum-well designer active materials

J. Hader, A. R. Zakharian, J. V. Moloney, T. R. Nelson, W. J. Siskaninetz, J. E. Ehret, K. Hantke, S. W. Koch, M. Hofmann

Research output: Contribution to specialist publication › Article

8 Scopus citations

Abstract

Semiconductor quantum-well (QW) designer active materials were discussed. The optical properties of QW semiconductor materials were studied. Photoluminescence spectra at different illumination intensities for 5-nm In_0.2Ga_0.8As was also investigated. The gain spectra at different carrier densities was also discussed.

Original language	English (US)
Pages	22
Number of pages	1
Volume	13
No	12
Specialist publication	Optics and Photonics News
DOIs	https://doi.org/10.1364/opn.13.12.000022
State	Published - Dec 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1364/opn.13.12.000022

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title = "Semiconductor quantum-well designer active materials",

abstract = "Semiconductor quantum-well (QW) designer active materials were discussed. The optical properties of QW semiconductor materials were studied. Photoluminescence spectra at different illumination intensities for 5-nm In0.2Ga0.8As was also investigated. The gain spectra at different carrier densities was also discussed.",

author = "J. Hader and Zakharian, {A. R.} and Moloney, {J. V.} and Nelson, {T. R.} and Siskaninetz, {W. J.} and Ehret, {J. E.} and K. Hantke and Koch, {S. W.} and M. Hofmann",

year = "2002",

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AU - Hader, J.

AU - Zakharian, A. R.

AU - Moloney, J. V.

AU - Nelson, T. R.

AU - Siskaninetz, W. J.

AU - Ehret, J. E.

AU - Hantke, K.

AU - Koch, S. W.

AU - Hofmann, M.

PY - 2002/12

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N2 - Semiconductor quantum-well (QW) designer active materials were discussed. The optical properties of QW semiconductor materials were studied. Photoluminescence spectra at different illumination intensities for 5-nm In0.2Ga0.8As was also investigated. The gain spectra at different carrier densities was also discussed.

AB - Semiconductor quantum-well (QW) designer active materials were discussed. The optical properties of QW semiconductor materials were studied. Photoluminescence spectra at different illumination intensities for 5-nm In0.2Ga0.8As was also investigated. The gain spectra at different carrier densities was also discussed.

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Semiconductor quantum-well designer active materials

Abstract

ASJC Scopus subject areas

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