Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors

Shruti Nirantar; Taimur Ahmed; Guanghui Ren; Philipp Gutruf; Chengong Xu; Madhu Bhaskaran; Sumeet Walia; Sharath Sriram

doi:10.1109/IVEC.2019.8745106

Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors

Shruti Nirantar, Taimur Ahmed, Guanghui Ren, Philipp Gutruf, Chengong Xu, Madhu Bhaskaran, Sumeet Walia, Sharath Sriram

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We introduce a nann-scale, metal-based, field emission air channel transistor. Comparative analysis of tungsten, gold, and platinum based devices is presented. Devices are fabricated with electron beam lithography, achieving channel lengths less than 35 nm. With this small channel length, vacuum-like carrier transport is possible in air under room temperature and pressure. Source and drain electrodes have planar, symmetric, and tapered-sharp geometry. Due to this, devices operate in bi-direction with voltages \pmb{< 2}\mathbf{V} and current in nA range. The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.

Original language	English (US)
Title of host publication	2019 International Vacuum Electronics Conference, IVEC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538675342
DOIs	https://doi.org/10.1109/IVEC.2019.8745106
State	Published - Apr 2019
Externally published	Yes
Event	2019 International Vacuum Electronics Conference, IVEC 2019 - Busan, Korea, Republic of Duration: Apr 28 2019 → May 1 2019

Publication series

Name	2019 International Vacuum Electronics Conference, IVEC 2019

Conference

Conference	2019 International Vacuum Electronics Conference, IVEC 2019
Country/Territory	Korea, Republic of
City	Busan
Period	4/28/19 → 5/1/19

Keywords

Air-channel transistor
field emission
metal transistors
semiconductor-free nanoelectronics

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IVEC.2019.8745106

Cite this

Nirantar, S., Ahmed, T., Ren, G., Gutruf, P., Xu, C., Bhaskaran, M., Walia, S., & Sriram, S. (2019). Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors. In 2019 International Vacuum Electronics Conference, IVEC 2019 Article 8745106 (2019 International Vacuum Electronics Conference, IVEC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVEC.2019.8745106

Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors. / Nirantar, Shruti; Ahmed, Taimur; Ren, Guanghui et al.
2019 International Vacuum Electronics Conference, IVEC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8745106 (2019 International Vacuum Electronics Conference, IVEC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nirantar, S, Ahmed, T, Ren, G, Gutruf, P, Xu, C, Bhaskaran, M, Walia, S & Sriram, S 2019, Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors. in 2019 International Vacuum Electronics Conference, IVEC 2019., 8745106, 2019 International Vacuum Electronics Conference, IVEC 2019, Institute of Electrical and Electronics Engineers Inc., 2019 International Vacuum Electronics Conference, IVEC 2019, Busan, Korea, Republic of, 4/28/19. https://doi.org/10.1109/IVEC.2019.8745106

Nirantar S, Ahmed T, Ren G, Gutruf P, Xu C, Bhaskaran M et al. Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors. In 2019 International Vacuum Electronics Conference, IVEC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8745106. (2019 International Vacuum Electronics Conference, IVEC 2019). doi: 10.1109/IVEC.2019.8745106

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title = "Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors",

abstract = "We introduce a nann-scale, metal-based, field emission air channel transistor. Comparative analysis of tungsten, gold, and platinum based devices is presented. Devices are fabricated with electron beam lithography, achieving channel lengths less than 35 nm. With this small channel length, vacuum-like carrier transport is possible in air under room temperature and pressure. Source and drain electrodes have planar, symmetric, and tapered-sharp geometry. Due to this, devices operate in bi-direction with voltages \pmb{< 2}\mathbf{V} and current in nA range. The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.",

keywords = "Air-channel transistor, field emission, metal transistors, semiconductor-free nanoelectronics",

author = "Shruti Nirantar and Taimur Ahmed and Guanghui Ren and Philipp Gutruf and Chengong Xu and Madhu Bhaskaran and Sumeet Walia and Sharath Sriram",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 International Vacuum Electronics Conference, IVEC 2019 ; Conference date: 28-04-2019 Through 01-05-2019",

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doi = "10.1109/IVEC.2019.8745106",

language = "English (US)",

series = "2019 International Vacuum Electronics Conference, IVEC 2019",

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AU - Nirantar, Shruti

AU - Ahmed, Taimur

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AU - Gutruf, Philipp

AU - Xu, Chengong

AU - Bhaskaran, Madhu

AU - Walia, Sumeet

AU - Sriram, Sharath

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N2 - We introduce a nann-scale, metal-based, field emission air channel transistor. Comparative analysis of tungsten, gold, and platinum based devices is presented. Devices are fabricated with electron beam lithography, achieving channel lengths less than 35 nm. With this small channel length, vacuum-like carrier transport is possible in air under room temperature and pressure. Source and drain electrodes have planar, symmetric, and tapered-sharp geometry. Due to this, devices operate in bi-direction with voltages \pmb{< 2}\mathbf{V} and current in nA range. The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.

AB - We introduce a nann-scale, metal-based, field emission air channel transistor. Comparative analysis of tungsten, gold, and platinum based devices is presented. Devices are fabricated with electron beam lithography, achieving channel lengths less than 35 nm. With this small channel length, vacuum-like carrier transport is possible in air under room temperature and pressure. Source and drain electrodes have planar, symmetric, and tapered-sharp geometry. Due to this, devices operate in bi-direction with voltages \pmb{< 2}\mathbf{V} and current in nA range. The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.

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KW - field emission

KW - metal transistors

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Semiconductor-Free Field-Emission Nanoelectronics: Application in Air-Channel Transistors

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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