Self-aligned photoresist patterning for integrated optics

A novel technique that provides self-alignment in the photoresist exposure step of the photolithography process is presented. In this procedure, the mode of the waveguide itself defines the intensity pattern that exposes the photoresist. The technique could be used to define the active area for an organic LED and achieve the integration of an organic LED with optical waveguide, a grating, and a detector to simulate the operation and structure of a multifunctional broadband integrated sensor element based on an organic-inorganic structure.