Selective removal of native SiO2 Using XeF2

A. Hinckley; P. Mancheno; C. S. Lai; A. J. Muscat

doi:10.1149/06907.0225ecst

Selective removal of native SiO₂ Using XeF₂

A. Hinckley, P. Mancheno, C. S. Lai, A. J. Muscat

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

The selective removal of native SiO₂ with respect to Si and thermal SiO₂ using XeF₂ was studied with ellipsometry, temperatureprogrammed desorption (TPD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). The native SiO₂ layer was removed with a static process at a pressure of 1 Torr and room temperature, but the Si substrate was roughened on a micron scale. To avoid roughening, a continuous flow of XeF₂ was used at pressures lower than 10 mTorr. XPS analysis confirmed that the XeF₂ exposure fluorinated the native oxide and both the oxide and fluorine were removed by heating to 925 K (650 °C). AFM showed no change in surface roughness after the low pressure exposure and heating, and together with XPS peak area ratios before and after XeF₂ show that the native oxide was etched without etching the underlying Si substrate.

Original language	English (US)
Title of host publication	Atomic Layer Deposition Applications 11
Editors	F. Roozeboom, S. De Gendt, A. Delabie, J. W. Elam, O. van der Straten, C. Huffman
Publisher	Electrochemical Society Inc.
Pages	225-232
Number of pages	8
Edition	7
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06907.0225ecst
State	Published - 2015
Event	Symposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	7
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/06907.0225ecst

Cite this

Hinckley, A., Mancheno, P., Lai, C. S., & Muscat, A. J. (2015). Selective removal of native SiO₂ Using XeF₂. In F. Roozeboom, S. De Gendt, A. Delabie, J. W. Elam, O. van der Straten, & C. Huffman (Eds.), Atomic Layer Deposition Applications 11 (7 ed., pp. 225-232). (ECS Transactions; Vol. 69, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/06907.0225ecst

Selective removal of native SiO₂ Using XeF₂. / Hinckley, A.; Mancheno, P.; Lai, C. S. et al.
Atomic Layer Deposition Applications 11. ed. / F. Roozeboom; S. De Gendt; A. Delabie; J. W. Elam; O. van der Straten; C. Huffman. 7. ed. Electrochemical Society Inc., 2015. p. 225-232 (ECS Transactions; Vol. 69, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hinckley, A, Mancheno, P, Lai, CS & Muscat, AJ 2015, Selective removal of native SiO₂ Using XeF₂. in F Roozeboom, S De Gendt, A Delabie, JW Elam, O van der Straten & C Huffman (eds), Atomic Layer Deposition Applications 11. 7 edn, ECS Transactions, no. 7, vol. 69, Electrochemical Society Inc., pp. 225-232, Symposium on Atomic Layer Deposition Applications 11 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06907.0225ecst

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N2 - The selective removal of native SiO2 with respect to Si and thermal SiO2 using XeF2 was studied with ellipsometry, temperatureprogrammed desorption (TPD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). The native SiO2 layer was removed with a static process at a pressure of 1 Torr and room temperature, but the Si substrate was roughened on a micron scale. To avoid roughening, a continuous flow of XeF2 was used at pressures lower than 10 mTorr. XPS analysis confirmed that the XeF2 exposure fluorinated the native oxide and both the oxide and fluorine were removed by heating to 925 K (650 °C). AFM showed no change in surface roughness after the low pressure exposure and heating, and together with XPS peak area ratios before and after XeF2 show that the native oxide was etched without etching the underlying Si substrate.

AB - The selective removal of native SiO2 with respect to Si and thermal SiO2 using XeF2 was studied with ellipsometry, temperatureprogrammed desorption (TPD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and x-ray photoelectron spectroscopy (XPS). The native SiO2 layer was removed with a static process at a pressure of 1 Torr and room temperature, but the Si substrate was roughened on a micron scale. To avoid roughening, a continuous flow of XeF2 was used at pressures lower than 10 mTorr. XPS analysis confirmed that the XeF2 exposure fluorinated the native oxide and both the oxide and fluorine were removed by heating to 925 K (650 °C). AFM showed no change in surface roughness after the low pressure exposure and heating, and together with XPS peak area ratios before and after XeF2 show that the native oxide was etched without etching the underlying Si substrate.

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