Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

T. S. Moise; L. J. Guido; R. C. Barker; J. O. White; A. R. Kost

doi:10.1063/1.106879

Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

T. S. Moise
, L. J. Guido
, R. C. Barker
, J. O. White
, A. R. Kost

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al_0.15Ga_0.85As-In _0.055Ga_0.945As strained-layer single quantum well heterostructure. These effects, which are attributed to free-carrier screening of the strain-induced electric field, are expected to be useful for designing novel optoelectronic devices that exploit the unique electro-optic properties of (111) strained quantum wells.

Original language	English (US)
Pages (from-to)	2637-2639
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	21
DOIs	https://doi.org/10.1063/1.106879
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.106879

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abstract = "A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al0.15Ga0.85As-In 0.055Ga0.945As strained-layer single quantum well heterostructure. These effects, which are attributed to free-carrier screening of the strain-induced electric field, are expected to be useful for designing novel optoelectronic devices that exploit the unique electro-optic properties of (111) strained quantum wells.",

author = "Moise, \{T. S.\} and Guido, \{L. J.\} and Barker, \{R. C.\} and White, \{J. O.\} and Kost, \{A. R.\}",

year = "1992",

doi = "10.1063/1.106879",

language = "English (US)",

volume = "60",

pages = "2637--2639",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

AU - Moise, T. S.

AU - Guido, L. J.

AU - Barker, R. C.

AU - White, J. O.

AU - Kost, A. R.

PY - 1992

Y1 - 1992

N2 - A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al0.15Ga0.85As-In 0.055Ga0.945As strained-layer single quantum well heterostructure. These effects, which are attributed to free-carrier screening of the strain-induced electric field, are expected to be useful for designing novel optoelectronic devices that exploit the unique electro-optic properties of (111) strained quantum wells.

AB - A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al0.15Ga0.85As-In 0.055Ga0.945As strained-layer single quantum well heterostructure. These effects, which are attributed to free-carrier screening of the strain-induced electric field, are expected to be useful for designing novel optoelectronic devices that exploit the unique electro-optic properties of (111) strained quantum wells.

UR - https://www.scopus.com/pages/publications/0005837096

UR - https://www.scopus.com/pages/publications/0005837096#tab=citedBy

U2 - 10.1063/1.106879

DO - 10.1063/1.106879

M3 - Article

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EP - 2639

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

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