Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

T. S. Moise, L. J. Guido, R. C. Barker, J. O. White, A. R. Kost

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al0.15Ga0.85As-In 0.055Ga0.945As strained-layer single quantum well heterostructure. These effects, which are attributed to free-carrier screening of the strain-induced electric field, are expected to be useful for designing novel optoelectronic devices that exploit the unique electro-optic properties of (111) strained quantum wells.

Original languageEnglish (US)
Pages (from-to)2637-2639
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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