Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

Jiamin Xue; Javier Sanchez-Yamagishi; Danny Bulmash; Philippe Jacquod; Aparna Deshpande; K. Watanabe; T. Taniguchi; Pablo Jarillo-Herrero; Brian J. Leroy

doi:10.1038/nmat2968

Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

Jiamin Xue, Javier Sanchez-Yamagishi, Danny Bulmash, Philippe Jacquod, Aparna Deshpande, K. Watanabe, T. Taniguchi, Pablo Jarillo-Herrero, Brian J. Leroy

Physics

Research output: Contribution to journal › Article › peer-review

1151 Scopus citations

Abstract

Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low-density region at the Dirac point has been difficult because of disorder that leaves the graphene with local microscopic electron and hole puddles. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance. Here we use scanning tunnelling microscopy to show that graphene conforms to hBN, as evidenced by the presence of MoirÃ

Original language	English (US)
Pages (from-to)	282-285
Number of pages	4
Journal	Nature materials
Volume	10
Issue number	4
DOIs	https://doi.org/10.1038/nmat2968
State	Published - Apr 2011

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1038/nmat2968

Cite this

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title = "Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride",

abstract = "Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy-momentum dispersion relations which cross at the Dirac point. However, accessing the physics of the low-density region at the Dirac point has been difficult because of disorder that leaves the graphene with local microscopic electron and hole puddles. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance. Here we use scanning tunnelling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moir{\~A}",

author = "Jiamin Xue and Javier Sanchez-Yamagishi and Danny Bulmash and Philippe Jacquod and Aparna Deshpande and K. Watanabe and T. Taniguchi and Pablo Jarillo-Herrero and Leroy, {Brian J.}",

note = "Funding Information: The authors would like to thank W. Bao, Z. Zhao and C. N. Lau for providing the graphene on SiO2 samples used for the comparison with graphene on hBN. J.X., A.D. and B.J.L. were supported by US Army Research Laboratory and the US Army Research Office under contract/grant number W911NF-09-1-0333 and the National Science Foundation CAREER award DMR-0953784. P.J. was supported by the National Science Foundation under award DMR-0706319. J.S-Y., D.B. and P.J-H. were supported by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0001819 and by the 2009 US Office of Naval Research Multi University Research Initiative (MURI) on Graphene Advanced Terahertz Engineering (Gate) at MIT, Harvard and Boston Unversity.",

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Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

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