TY - JOUR

T1 - Scaling theory of the Mott-Hubbard metal-insulator transition in one dimension

AU - Stafford, C. A.

AU - Millis, A. J.

PY - 1993

Y1 - 1993

N2 - We use the Bethe ansatz equations to calculate the charge stiffness Dc=(L/2)d2E0/dc2c=0 of the one-dimensional repulsive-interaction Hubbard model for electron densities close to the Mott insulating value of one electron per site (n=1), where E0 is the ground-state energy, L is the circumference of the system (assumed to have periodic boundary conditions), and (Latin small letter h with strokec/e)c is the magnetic flux enclosed. We obtain an exact result for the asymptotic form of Dc(L) as L at n=1, which defines and yields an analytic expression for the correlation length in the Mott insulating phase of the model as a function of the on-site repulsion U. In the vicinity of the zero-temperature critical point U=0, n=1, we show that the charge stiffness has the hyperscaling form Dc(n,L,U)=Y+(/L), where =-1-n- and Y+ is a universal scaling function which we calculate. The physical significance of in the metallic phase of the model is that it defines the characteristic size of the charge-carrying solitons, or holons. We construct an explicit mapping for arbitrary U and 1 of the holons onto weakly interacting spinless fermions, and use this mapping to obtain an asymptotically exact expression for the low-temperature thermopower near the metal-insulator transition, which is a generalization to arbitrary U of a result previously obtained using a weak-coupling approximation, and implies holelike transport for 0<1-n-1.

AB - We use the Bethe ansatz equations to calculate the charge stiffness Dc=(L/2)d2E0/dc2c=0 of the one-dimensional repulsive-interaction Hubbard model for electron densities close to the Mott insulating value of one electron per site (n=1), where E0 is the ground-state energy, L is the circumference of the system (assumed to have periodic boundary conditions), and (Latin small letter h with strokec/e)c is the magnetic flux enclosed. We obtain an exact result for the asymptotic form of Dc(L) as L at n=1, which defines and yields an analytic expression for the correlation length in the Mott insulating phase of the model as a function of the on-site repulsion U. In the vicinity of the zero-temperature critical point U=0, n=1, we show that the charge stiffness has the hyperscaling form Dc(n,L,U)=Y+(/L), where =-1-n- and Y+ is a universal scaling function which we calculate. The physical significance of in the metallic phase of the model is that it defines the characteristic size of the charge-carrying solitons, or holons. We construct an explicit mapping for arbitrary U and 1 of the holons onto weakly interacting spinless fermions, and use this mapping to obtain an asymptotically exact expression for the low-temperature thermopower near the metal-insulator transition, which is a generalization to arbitrary U of a result previously obtained using a weak-coupling approximation, and implies holelike transport for 0<1-n-1.

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U2 - 10.1103/PhysRevB.48.1409

DO - 10.1103/PhysRevB.48.1409

M3 - Article

AN - SCOPUS:0001263926

SN - 0163-1829

VL - 48

SP - 1409

EP - 1425

JO - Physical Review B

JF - Physical Review B

IS - 3

ER -