Abstract
Spin-transfer torque (STT) random access memory has been researched as a promising alternative for static random access memory in reconfigurable fabrics, particularly in lookup tables (LUTs), due to its nonvolatility, low standby and static power, and high integration density features. In this brief, we leverage physical characteristics of magnetic tunnel junctions (MTJs) to design a unique reference MTJ which has a calibrated resistance matching the STT-based LUT (STT-LUT) circuit requirements to provide optimal reading operation. Results obtained show 42% and 70% power-delay product (PDP) improvement over previous MTJ-based LUT designs. Moreover, a four-input adaptive STT-based LUT (A-LUT) is proposed based on the developed STT-LUT, which is configurable to function in seven independent modes. An n-input A-LUT exhibits PDP which can be a fraction of n-input STT-LUT PDP, when performing two-input to (n-1)-input Boolean logic functions.
| Original language | English (US) |
|---|---|
| Article number | 7412716 |
| Pages (from-to) | 678-682 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
| Volume | 63 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 2016 |
| Externally published | Yes |
Keywords
- Low-power computation
- magnetic tunnel junction (MTJ)
- reconfigurable fabric
- spin-transfer torque (STT)
- spintronics
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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