Sample-orientation effects in solid-state high-harmonic generation: computational study of GaAs

We report on a large-scale simulation study of the sample-orientation effects in solid-state high-harmonic generation, utilizing a fully three-dimensional GaAs model in conjunction with a solver for semiconductor Bloch equations that faithfully reflects the material symmetry and accounts for the optical response from the entire Brillouin zone. The simulations, qualitatively compared to two sets of independent measurements, demonstrate that the orientation-resolved high-harmonic spectra represent an effective tool for rigorous testing of material models. The results are relevant for the future development of all-optical reconstruction of electronic band-structure fromthe solid-state high-harmonic generation measurements.