Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

C. C. Hsu; B. P. McGinnis; J. P. Sokoloff; G. Khitrova; H. M. Gibbs; N. Peyghambarian; S. T. Johns; M. F. Krol

doi:10.1063/1.350175

Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

C. C. Hsu
, B. P. McGinnis
, J. P. Sokoloff
, G. Khitrova
, H. M. Gibbs
, N. Peyghambarian
, S. T. Johns
, M. F. Krol

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The room-temperature nonlinear absorption spectra of a 40 Å GaInAs/AlInAs and a 90 Å GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 ¹⁸ and 1.0×10¹⁸ cm^-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.

Original language	English (US)
Pages (from-to)	5615-5618
Number of pages	4
Journal	Journal of Applied Physics
Volume	70
Issue number	10
DOIs	https://doi.org/10.1063/1.350175
State	Published - 1991

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Physics and Astronomy (miscellaneous)
General Physics and Astronomy

Access to Document

10.1063/1.350175

Cite this

@article{65dd9583941a41779ffa91767f232948,

title = "Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm",

abstract = "The room-temperature nonlinear absorption spectra of a 40 {\AA} GaInAs/AlInAs and a 90 {\AA} GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 18 and 1.0×1018 cm-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.",

author = "Hsu, \{C. C.\} and McGinnis, \{B. P.\} and Sokoloff, \{J. P.\} and G. Khitrova and Gibbs, \{H. M.\} and N. Peyghambarian and Johns, \{S. T.\} and Krol, \{M. F.\}",

year = "1991",

doi = "10.1063/1.350175",

language = "English (US)",

volume = "70",

pages = "5615--5618",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

AU - Hsu, C. C.

AU - McGinnis, B. P.

AU - Sokoloff, J. P.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Peyghambarian, N.

AU - Johns, S. T.

AU - Krol, M. F.

PY - 1991

Y1 - 1991

N2 - The room-temperature nonlinear absorption spectra of a 40 Å GaInAs/AlInAs and a 90 Å GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 18 and 1.0×1018 cm-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.

AB - The room-temperature nonlinear absorption spectra of a 40 Å GaInAs/AlInAs and a 90 Å GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 18 and 1.0×1018 cm-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.

UR - https://www.scopus.com/pages/publications/36449003716

UR - https://www.scopus.com/pages/publications/36449003716#tab=citedBy

U2 - 10.1063/1.350175

DO - 10.1063/1.350175

M3 - Article

AN - SCOPUS:36449003716

SN - 0021-8979

VL - 70

SP - 5615

EP - 5618

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this