Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

C. C. Hsu; B. P. McGinnis; J. P. Sokoloff; G. Khitrova; H. M. Gibbs; N. Peyghambarian; S. T. Johns; M. F. Krol

doi:10.1063/1.350175

Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

C. C. Hsu, B. P. McGinnis, J. P. Sokoloff, G. Khitrova, H. M. Gibbs, N. Peyghambarian, S. T. Johns, M. F. Krol

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4 Scopus citations

Abstract

The room-temperature nonlinear absorption spectra of a 40 Å GaInAs/AlInAs and a 90 Å GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 ¹⁸ and 1.0×10¹⁸ cm^-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.

Original language	English (US)
Pages (from-to)	5615-5618
Number of pages	4
Journal	Journal of Applied Physics
Volume	70
Issue number	10
DOIs	https://doi.org/10.1063/1.350175
State	Published - 1991

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General Physics and Astronomy

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@article{65dd9583941a41779ffa91767f232948,

title = "Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm",

abstract = "The room-temperature nonlinear absorption spectra of a 40 {\AA} GaInAs/AlInAs and a 90 {\AA} GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 18 and 1.0×1018 cm-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.",

author = "Hsu, {C. C.} and McGinnis, {B. P.} and Sokoloff, {J. P.} and G. Khitrova and Gibbs, {H. M.} and N. Peyghambarian and Johns, {S. T.} and Krol, {M. F.}",

year = "1991",

doi = "10.1063/1.350175",

language = "English (US)",

volume = "70",

pages = "5615--5618",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

AU - Hsu, C. C.

AU - McGinnis, B. P.

AU - Sokoloff, J. P.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Peyghambarian, N.

AU - Johns, S. T.

AU - Krol, M. F.

PY - 1991

Y1 - 1991

N2 - The room-temperature nonlinear absorption spectra of a 40 Å GaInAs/AlInAs and a 90 Å GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 18 and 1.0×1018 cm-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.

AB - The room-temperature nonlinear absorption spectra of a 40 Å GaInAs/AlInAs and a 90 Å GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump and probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2×10 18 and 1.0×1018 cm-3 with carrier recovery times of ≅5 ns and ≅750 ps for the two samples, respectively. These measured saturation carrier densities are close to the reported values for GaAs/AlGaAs MQWs. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical logic gate devices. We demonstrate a 125-ps recovery time for the etalon switching device at room temperature.

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DO - 10.1063/1.350175

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Room-temperature optical nonlinearities of GaInAs/AlInAs and GaAlInAs/AlInAs multiple quantum wells and integrated-mirror etalons at 1.3 μm

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