Room temperature operation of circular grating surface-emitting laser

Chunmeng Wu; Mikelis Svilans; Toshihiko Makino; Jan Glinski; Cornelius Blaauw; Cheryl Maritan; Gordon Knight; Mahmoud Fallahi; Ian Templeton; Romain Maciejko; Iraj Najafi

doi:10.1109/ISLC.1992.763581

Room temperature operation of circular grating surface-emitting laser

Chunmeng Wu
, Mikelis Svilans
, Toshihiko Makino
, Jan Glinski
, Cornelius Blaauw
, Cheryl Maritan
, Gordon Knight
, Mahmoud Fallahi
, Ian Templeton
, Romain Maciejko
, Iraj Najafi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report room temperature operation of an electrically-pumped circular grating surface-emitting DBR laser. The InGaAsP/InP device emits more than 10mW at a wavelength of 1.3μm under pulsed excitation.

Original language	English (US)
Title of host publication	Conference Digest - 13th IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	80-81
Number of pages	2
ISBN (Electronic)	4930813514
DOIs	https://doi.org/10.1109/ISLC.1992.763581
State	Published - 1992
Externally published	Yes
Event	13th IEEE International Semiconductor Laser Conference, ISLC 1992 - Takamatsu, Kagawa, Japan Duration: Sep 21 1992 → Sep 25 1992

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	1992-September
ISSN (Print)	0899-9406

Conference

Conference	13th IEEE International Semiconductor Laser Conference, ISLC 1992
Country/Territory	Japan
City	Takamatsu, Kagawa
Period	9/21/92 → 9/25/92

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.1992.763581

Cite this

Wu, C., Svilans, M., Makino, T., Glinski, J., Blaauw, C., Maritan, C., Knight, G., Fallahi, M., Templeton, I., Maciejko, R., & Najafi, I. (1992). Room temperature operation of circular grating surface-emitting laser. In Conference Digest - 13th IEEE International Semiconductor Laser Conference (pp. 80-81). Article 763581 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 1992-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.1992.763581

Room temperature operation of circular grating surface-emitting laser. / Wu, Chunmeng; Svilans, Mikelis; Makino, Toshihiko et al.
Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 1992. p. 80-81 763581 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 1992-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, C, Svilans, M, Makino, T, Glinski, J, Blaauw, C, Maritan, C, Knight, G, Fallahi, M, Templeton, I, Maciejko, R & Najafi, I 1992, Room temperature operation of circular grating surface-emitting laser. in Conference Digest - 13th IEEE International Semiconductor Laser Conference., 763581, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 1992-September, Institute of Electrical and Electronics Engineers Inc., pp. 80-81, 13th IEEE International Semiconductor Laser Conference, ISLC 1992, Takamatsu, Kagawa, Japan, 9/21/92. https://doi.org/10.1109/ISLC.1992.763581

Wu C, Svilans M, Makino T, Glinski J, Blaauw C, Maritan C et al. Room temperature operation of circular grating surface-emitting laser. In Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 1992. p. 80-81. 763581. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.1992.763581

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title = "Room temperature operation of circular grating surface-emitting laser",

abstract = "We report room temperature operation of an electrically-pumped circular grating surface-emitting DBR laser. The InGaAsP/InP device emits more than 10mW at a wavelength of 1.3μm under pulsed excitation.",

author = "Chunmeng Wu and Mikelis Svilans and Toshihiko Makino and Jan Glinski and Cornelius Blaauw and Cheryl Maritan and Gordon Knight and Mahmoud Fallahi and Ian Templeton and Romain Maciejko and Iraj Najafi",

note = "Publisher Copyright: {\textcopyright} 1992 Institute of Electrical and Electronics Engineers Inc. All rights reserved.; 13th IEEE International Semiconductor Laser Conference, ISLC 1992 ; Conference date: 21-09-1992 Through 25-09-1992",

year = "1992",

doi = "10.1109/ISLC.1992.763581",

language = "English (US)",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

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AU - Wu, Chunmeng

AU - Svilans, Mikelis

AU - Makino, Toshihiko

AU - Glinski, Jan

AU - Blaauw, Cornelius

AU - Maritan, Cheryl

AU - Knight, Gordon

AU - Fallahi, Mahmoud

AU - Templeton, Ian

AU - Maciejko, Romain

AU - Najafi, Iraj

PY - 1992

Y1 - 1992

N2 - We report room temperature operation of an electrically-pumped circular grating surface-emitting DBR laser. The InGaAsP/InP device emits more than 10mW at a wavelength of 1.3μm under pulsed excitation.

AB - We report room temperature operation of an electrically-pumped circular grating surface-emitting DBR laser. The InGaAsP/InP device emits more than 10mW at a wavelength of 1.3μm under pulsed excitation.

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U2 - 10.1109/ISLC.1992.763581

DO - 10.1109/ISLC.1992.763581

M3 - Conference contribution

AN - SCOPUS:85067689089

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

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EP - 81

BT - Conference Digest - 13th IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 21 September 1992 through 25 September 1992

ER -

Room temperature operation of circular grating surface-emitting laser

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