Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

T. R. Nelson; J. P. Prineas; G. Khitrova; H. M. Gibbs; J. D. Berger; E. K. Lindmark; J. H. Shin; H. E. Shin; Y. H. Lee; P. Tayebati; L. Javniskis

doi:10.1063/1.116829

Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

T. R. Nelson
, J. P. Prineas
, G. Khitrova
, H. M. Gibbs
, J. D. Berger
, E. K. Lindmark
, J. H. Shin
, H. E. Shin
, Y. H. Lee
, P. Tayebati
, L. Javniskis

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400°C in the presence of a pressurized N₂/H₂O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature.

Original language	English (US)
Pages (from-to)	3031-3033
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	20
DOIs	https://doi.org/10.1063/1.116829
State	Published - Nov 11 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.116829

Cite this

@article{2d3b58287ef4494ea4d16e7dd9b62236,

title = "Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors",

abstract = "A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400°C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature.",

author = "Nelson, \{T. R.\} and Prineas, \{J. P.\} and G. Khitrova and Gibbs, \{H. M.\} and Berger, \{J. D.\} and Lindmark, \{E. K.\} and Shin, \{J. H.\} and Shin, \{H. E.\} and Lee, \{Y. H.\} and P. Tayebati and L. Javniskis",

year = "1996",

month = nov,

day = "11",

doi = "10.1063/1.116829",

language = "English (US)",

volume = "69",

pages = "3031--3033",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

AU - Nelson, T. R.

AU - Prineas, J. P.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Berger, J. D.

AU - Lindmark, E. K.

AU - Shin, J. H.

AU - Shin, H. E.

AU - Lee, Y. H.

AU - Tayebati, P.

AU - Javniskis, L.

PY - 1996/11/11

Y1 - 1996/11/11

N2 - A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400°C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature.

AB - A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400°C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature.

UR - https://www.scopus.com/pages/publications/0001337920

UR - https://www.scopus.com/pages/publications/0001337920#tab=citedBy

U2 - 10.1063/1.116829

DO - 10.1063/1.116829

M3 - Article

AN - SCOPUS:0001337920

SN - 0003-6951

VL - 69

SP - 3031

EP - 3033

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

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