Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

T. R. Nelson; J. P. Prineas; G. Khitrova; H. M. Gibbs; J. D. Berger; E. K. Lindmark; J. H. Shin; H. E. Shin; Y. H. Lee; P. Tayebati; L. Javniskis

doi:10.1063/1.116829

Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

T. R. Nelson, J. P. Prineas, G. Khitrova, H. M. Gibbs, J. D. Berger, E. K. Lindmark, J. H. Shin, H. E. Shin, Y. H. Lee, P. Tayebati, L. Javniskis

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400°C in the presence of a pressurized N₂/H₂O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature.

Original language	English (US)
Pages (from-to)	3031-3033
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	20
DOIs	https://doi.org/10.1063/1.116829
State	Published - Nov 11 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors",

abstract = "A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400°C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature.",

author = "Nelson, {T. R.} and Prineas, {J. P.} and G. Khitrova and Gibbs, {H. M.} and Berger, {J. D.} and Lindmark, {E. K.} and Shin, {J. H.} and Shin, {H. E.} and Lee, {Y. H.} and P. Tayebati and L. Javniskis",

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doi = "10.1063/1.116829",

language = "English (US)",

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T1 - Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

AU - Nelson, T. R.

AU - Prineas, J. P.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Berger, J. D.

AU - Lindmark, E. K.

AU - Shin, J. H.

AU - Shin, H. E.

AU - Lee, Y. H.

AU - Tayebati, P.

AU - Javniskis, L.

PY - 1996/11/11

Y1 - 1996/11/11

N2 - A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400°C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature.

AB - A GaAs/AlAs microcavity containing six InGaAs quantum wells was grown, and the sample was then etched via chemically-assisted ion-beam etching to form 50-μm-diam cylindrical mesas. The formation of native oxides, accomplished by baking the samples at 400°C in the presence of a pressurized N2/H2O vapor line, lowered the refractive index of the AlAs layers to 1.5. The higher refractive index contrast more effectively confined the intracavity field, leading to well-resolved reflectivity dips with an exciton-polariton splitting of 6.72 nm=9.44 meV at room temperature.

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Room-temperature normal-mode coupling in a semiconductor microcavity utilizing native-oxide AlAl/GaAs mirrors

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