ROOM TEMPERATURE EXCITONIC NONLINEAR ABSORPTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD).

H. C. Lee; A. Hariz; P. D. Dapkus; A. Kost; M. Kawase; E. Garmire

ROOM TEMPERATURE EXCITONIC NONLINEAR ABSORPTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD).

H. C. Lee
, A. Hariz
, P. D. Dapkus
, A. Kost
, M. Kawase
, E. Garmire

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The growth by metalorganic chemical vapor deposition (MOCVD) of GaAs/AlGaAs multiple quantum well (MQW) structures that exhibit narrow-line, room-temperature excitonic absorption is reported. The photoluminescence, excitation spectra, and absorption properties of single-quantum-well and MQW structures grown under a variety of growth conditions have been used to determine the optimal growth conditions for the fabrication of these devices. These characteristics are discussed, and an optimization methodology that does not require the growth of thick multilayers is described. The linear and nonlinear optical properties of these structures and the implications of this work for the construction of large-area arrays of switches are discussed.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	Optical Soc of America (Technical Digest Series v 13)
Pages	85-87
Number of pages	3
ISBN (Print)	0936659505
State	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

General Engineering

Cite this

ROOM TEMPERATURE EXCITONIC NONLINEAR ABSORPTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). / Lee, H. C.; Hariz, A.; Dapkus, P. D. et al.
Unknown Host Publication Title. Optical Soc of America (Technical Digest Series v 13), 1987. p. 85-87.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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abstract = "The growth by metalorganic chemical vapor deposition (MOCVD) of GaAs/AlGaAs multiple quantum well (MQW) structures that exhibit narrow-line, room-temperature excitonic absorption is reported. The photoluminescence, excitation spectra, and absorption properties of single-quantum-well and MQW structures grown under a variety of growth conditions have been used to determine the optimal growth conditions for the fabrication of these devices. These characteristics are discussed, and an optimization methodology that does not require the growth of thick multilayers is described. The linear and nonlinear optical properties of these structures and the implications of this work for the construction of large-area arrays of switches are discussed.",

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AU - Lee, H. C.

AU - Hariz, A.

AU - Dapkus, P. D.

AU - Kost, A.

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AU - Garmire, E.

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N2 - The growth by metalorganic chemical vapor deposition (MOCVD) of GaAs/AlGaAs multiple quantum well (MQW) structures that exhibit narrow-line, room-temperature excitonic absorption is reported. The photoluminescence, excitation spectra, and absorption properties of single-quantum-well and MQW structures grown under a variety of growth conditions have been used to determine the optimal growth conditions for the fabrication of these devices. These characteristics are discussed, and an optimization methodology that does not require the growth of thick multilayers is described. The linear and nonlinear optical properties of these structures and the implications of this work for the construction of large-area arrays of switches are discussed.

AB - The growth by metalorganic chemical vapor deposition (MOCVD) of GaAs/AlGaAs multiple quantum well (MQW) structures that exhibit narrow-line, room-temperature excitonic absorption is reported. The photoluminescence, excitation spectra, and absorption properties of single-quantum-well and MQW structures grown under a variety of growth conditions have been used to determine the optimal growth conditions for the fabrication of these devices. These characteristics are discussed, and an optimization methodology that does not require the growth of thick multilayers is described. The linear and nonlinear optical properties of these structures and the implications of this work for the construction of large-area arrays of switches are discussed.

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M3 - Conference contribution

AN - SCOPUS:0023167362

SN - 0936659505

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BT - Unknown Host Publication Title

PB - Optical Soc of America (Technical Digest Series v 13)

ER -

ROOM TEMPERATURE EXCITONIC NONLINEAR ABSORPTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD).

Abstract

ASJC Scopus subject areas

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