ROOM-TEMPERATURE BULK GaAs: DOMINANT NONLINEARITIES, FAST-RECOVERY GATES, ARRAYS FOR PARALLEL PROCESSING.

H. M. Gibbs; N. Peyghambarian; Y. H. Lee; M. Warren; A. Chavez-Pirson; S. H. Park; J. Morhange; A. Jeffrey; S. W. Koch; A. C. Gossard; W. Wiegmann

doi:10.1007/978-3-642-71907-3_16

ROOM-TEMPERATURE BULK GaAs: DOMINANT NONLINEARITIES, FAST-RECOVERY GATES, ARRAYS FOR PARALLEL PROCESSING.

H. M. Gibbs, N. Peyghambarian, Y. H. Lee, M. Warren, A. Chavez-Pirson, S. H. Park, J. Morhange, A. Jeffrey, S. W. Koch, A. C. Gossard, W. Wiegmann

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Reduction of continuum enhancement and band filling are the dominant optical nonlinearities at room temperature. Surface recombination gives a 30-ps recovery time following AND-gate operation. Reactive ion etching can be used to define large arrays of pixels for parallel processing.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	Springer-Verlag
Pages	195-205
Number of pages	11
ISBN (Print)	3540175504, 9783540175506
DOIs	https://doi.org/10.1007/978-3-642-71907-3_16
State	Published - 1987
Event	Electro-opt and Photorefractive Mater, Proc of the Int Sch on Mater Sci and Technol - Erice, Italy Duration: Jul 6 1986 → Jul 17 1986

Other

Other	Electro-opt and Photorefractive Mater, Proc of the Int Sch on Mater Sci and Technol
City	Erice, Italy
Period	7/6/86 → 7/17/86

ASJC Scopus subject areas

General Engineering

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10.1007/978-3-642-71907-3_16

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Gibbs, H. M., Peyghambarian, N., Lee, Y. H., Warren, M., Chavez-Pirson, A., Park, S. H., Morhange, J., Jeffrey, A., Koch, S. W., Gossard, A. C., & Wiegmann, W. (1987). ROOM-TEMPERATURE BULK GaAs: DOMINANT NONLINEARITIES, FAST-RECOVERY GATES, ARRAYS FOR PARALLEL PROCESSING. In Unknown Host Publication Title (pp. 195-205). Springer-Verlag. https://doi.org/10.1007/978-3-642-71907-3_16

Gibbs, HM, Peyghambarian, N, Lee, YH, Warren, M, Chavez-Pirson, A, Park, SH, Morhange, J, Jeffrey, A, Koch, SW, Gossard, AC & Wiegmann, W 1987, ROOM-TEMPERATURE BULK GaAs: DOMINANT NONLINEARITIES, FAST-RECOVERY GATES, ARRAYS FOR PARALLEL PROCESSING. in Unknown Host Publication Title. Springer-Verlag, pp. 195-205, Electro-opt and Photorefractive Mater, Proc of the Int Sch on Mater Sci and Technol, Erice, Italy, 7/6/86. https://doi.org/10.1007/978-3-642-71907-3_16

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abstract = "Reduction of continuum enhancement and band filling are the dominant optical nonlinearities at room temperature. Surface recombination gives a 30-ps recovery time following AND-gate operation. Reactive ion etching can be used to define large arrays of pixels for parallel processing.",

author = "Gibbs, {H. M.} and N. Peyghambarian and Lee, {Y. H.} and M. Warren and A. Chavez-Pirson and Park, {S. H.} and J. Morhange and A. Jeffrey and Koch, {S. W.} and Gossard, {A. C.} and W. Wiegmann",

year = "1987",

doi = "10.1007/978-3-642-71907-3_16",

language = "English (US)",

isbn = "3540175504",

publisher = "Springer-Verlag",

pages = "195--205",

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T1 - ROOM-TEMPERATURE BULK GaAs

T2 - Electro-opt and Photorefractive Mater, Proc of the Int Sch on Mater Sci and Technol

AU - Gibbs, H. M.

AU - Peyghambarian, N.

AU - Lee, Y. H.

AU - Warren, M.

AU - Chavez-Pirson, A.

AU - Park, S. H.

AU - Morhange, J.

AU - Jeffrey, A.

AU - Koch, S. W.

AU - Gossard, A. C.

AU - Wiegmann, W.

PY - 1987

Y1 - 1987

N2 - Reduction of continuum enhancement and band filling are the dominant optical nonlinearities at room temperature. Surface recombination gives a 30-ps recovery time following AND-gate operation. Reactive ion etching can be used to define large arrays of pixels for parallel processing.

AB - Reduction of continuum enhancement and band filling are the dominant optical nonlinearities at room temperature. Surface recombination gives a 30-ps recovery time following AND-gate operation. Reactive ion etching can be used to define large arrays of pixels for parallel processing.

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SN - 9783540175506

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EP - 205

BT - Unknown Host Publication Title

PB - Springer-Verlag

Y2 - 6 July 1986 through 17 July 1986

ER -

ROOM-TEMPERATURE BULK GaAs: DOMINANT NONLINEARITIES, FAST-RECOVERY GATES, ARRAYS FOR PARALLEL PROCESSING.

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