Abstract
A theoretical analysis of the influence of carrier diffusion on the threshold characteristics of semi-conductor microdisc lasers is given. The cold-cavity modes (Whispering Gallery Modes) and their wavelengths are obtained from approximate analytical solutions of Maxwell's equations. In the steady-state, the parameters of these modes are modified in an active semiconductor medium by the presence of intensity dependent gain, refractive index and diffusion of the carriers. An increase of threshold current with decreasing carriers' lifetime is predicted. Also, the dependence of the mode pulling on the diffusion length is discussed. These effects can be explained by considering spatially varying carrier density and therefore the spatially dependent refractive index and gain.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 176-187 |
| Number of pages | 12 |
| Volume | 2693 |
| DOIs | |
| State | Published - 1996 |
| Event | Physics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA Duration: Jan 29 1996 → Feb 2 1996 |
Other
| Other | Physics and Simulation of Optoelectronic Devices IV |
|---|---|
| City | San Jose, CA, USA |
| Period | 1/29/96 → 2/2/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering