Revisiting the removal rate model for oxide CMP

Jamshid Sorooshian, Leonard Borucki, David Stein, Robert Timon, Dale Hetherington, Ara Philipossian

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


This study seeks to explain removal rate trends and scatter in thermal silicon dioxide and PECVD tetraethoxysilane-sourced silicon dioxide (PE-TEOS) CMP using an augmented version of the Langmuir-Hinshelwood mechanism. The proposed model combines the chemical and mechanical facets of interlevel dielectric (ILD) CMP and hypothesizes that the chemical reaction temperature is determined by transient flash heating. The agreement between the model and data suggests that the main source of apparent scatter in removal rate data plotted as rate versus pressure times velocity is competition between mechanical and thermochemical mechanisms. A method of visualizing removal rate data is described that shows, apart from any particular interpretative theory, that a smooth and easily interpretable surface underlies the apparent scatter.

Original languageEnglish (US)
Pages (from-to)639-651
Number of pages13
JournalJournal of Tribology
Issue number3
StatePublished - Jul 2005


  • Flash heating
  • Lim-Ashby wear plot
  • Oxide
  • Preston
  • Removal rate
  • TEOS

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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