Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2

Bo Xie; Anthony J. Muscat

doi:10.4028/3-908451-06-x.323

Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO₂

Bo Xie, Anthony J. Muscat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) processed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after rinsing with pure SCCO₂. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface properties of mesoporous p-MSQ and are candidate pore sealing additives.

Original language	English (US)
Title of host publication	Ultra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS)
Publisher	Trans Tech Publications Ltd
Pages	323-326
Number of pages	4
ISBN (Print)	390845106X, 9783908451068
DOIs	https://doi.org/10.4028/3-908451-06-x.323
State	Published - 2005
Externally published	Yes
Event	7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004 - Brussels, Belgium Duration: Sep 20 2004 → Sep 22 2004

Publication series

Name	Solid State Phenomena
Volume	103-104
ISSN (Print)	1012-0394

Other

Other	7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004
Country/Territory	Belgium
City	Brussels
Period	9/20/04 → 9/22/04

Keywords

Contact angle
Electrical measurement
FTIR
Film repair
Monochlorosilane
Pore capping
Porous MSQ

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

Access to Document

10.4028/3-908451-06-x.323

Cite this

Xie, B., & Muscat, A. J. (2005). Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO₂. In Ultra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS) (pp. 323-326). (Solid State Phenomena; Vol. 103-104). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-06-x.323

Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO₂. / Xie, Bo; Muscat, Anthony J.
Ultra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS). Trans Tech Publications Ltd, 2005. p. 323-326 (Solid State Phenomena; Vol. 103-104).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xie, B & Muscat, AJ 2005, Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO₂. in Ultra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS). Solid State Phenomena, vol. 103-104, Trans Tech Publications Ltd, pp. 323-326, 7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004, Brussels, Belgium, 9/20/04. https://doi.org/10.4028/3-908451-06-x.323

Xie B, Muscat AJ. Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO₂. In Ultra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS). Trans Tech Publications Ltd. 2005. p. 323-326. (Solid State Phenomena). doi: 10.4028/3-908451-06-x.323

@inproceedings{0fc46e8efff94135a6984b9983611cec,

title = "Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2",

abstract = "Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) processed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after rinsing with pure SCCO2. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface properties of mesoporous p-MSQ and are candidate pore sealing additives.",

keywords = "Contact angle, Electrical measurement, FTIR, Film repair, Monochlorosilane, Pore capping, Porous MSQ",

author = "Bo Xie and Muscat, {Anthony J.}",

year = "2005",

doi = "10.4028/3-908451-06-x.323",

language = "English (US)",

isbn = "390845106X",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "323--326",

booktitle = "Ultra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS)",

note = "7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004 ; Conference date: 20-09-2004 Through 22-09-2004",

}

TY - GEN

T1 - Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2

AU - Xie, Bo

AU - Muscat, Anthony J.

PY - 2005

Y1 - 2005

N2 - Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) processed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after rinsing with pure SCCO2. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface properties of mesoporous p-MSQ and are candidate pore sealing additives.

AB - Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) processed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after rinsing with pure SCCO2. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface properties of mesoporous p-MSQ and are candidate pore sealing additives.

KW - Contact angle

KW - Electrical measurement

KW - FTIR

KW - Film repair

KW - Monochlorosilane

KW - Pore capping

KW - Porous MSQ

UR - http://www.scopus.com/inward/record.url?scp=85085716154&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85085716154&partnerID=8YFLogxK

U2 - 10.4028/3-908451-06-x.323

DO - 10.4028/3-908451-06-x.323

M3 - Conference contribution

AN - SCOPUS:85085716154

SN - 390845106X

SN - 9783908451068

T3 - Solid State Phenomena

SP - 323

EP - 326

BT - Ultra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS)

PB - Trans Tech Publications Ltd

T2 - 7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004

Y2 - 20 September 2004 through 22 September 2004

ER -