Repair of porous methylsilsesquioxane films using supercritical carbon dioxide

Bo Xie, Anthony J. Muscat

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


Porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) were treated with alkyldimethylmonochlorosilanes having chain lengths of one, four, and eight carbon atoms dissolved in supercritical carbon dioxide at 150-300 atm and 50-60°C to repair oxygen ashing damage. Fourier transform infrared (FTIR) spectroscopy showed that trimethylchlorosilane (TMCS), butyldimethylchlorosilane (BDMCS), and octyldimethylchlorosilane (ODMCS) reacted with silanol groups on the surfaces of the pores producing covalent Si-O-Si bonds. Self-condensation between alkylsilanols produced a residue on the surface, which was partially removed using a pure scCO2 rinse. The hydrophobicity of the blanket p-MSQ surface was recovered after silylation treatment as shown by contact angles >85°. The initial dielectric constant of 2.4 ± 0.1 increased to 3.5 ± 0.1 after oxygen plasma ashing and was reduced to 2.6 ± 0.1 by TMCS, 2.8 ± 0.1 by BDMCS, and 3.2 by ODMCS.

Original languageEnglish (US)
Pages (from-to)13-18
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2004
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004 - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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