Repair of porous methyl-substituted silicon dioxide films using supercritical CO2

Bo Xie, Anthony J. Muscat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The repair of porous methyl-substituted silicon dioxide films after plasma processing was investigated using hexamethyldisilazane (HMDS) dissolved in liquid and supercritical carbon dioxide. The films were cured, blanket methylsilsesquioxane (MSQ) layers (JSR LKD 5109). An ashed film treated with a HMDS/supercritical carbon dioxide (scCO2) mixture was stable for thirty days without readsorbing moisture from the ambient as shown by both Fourier transform infrared (FTIK) spectroscopy and contact angle measurements, whereas a film annealed to 360°C in nitrogen for 2 min readsorbed moisture quickly over 10 days. The film thickness increased by 2-5 nm and the surfaces were Hydrophobic after processing with HMDS. The dielectric constant of metal-insulator-semiconductor capacitors was 2.89 ± 0.08 in 1 vol% HMDS/liquid CO2, 2.55 ± 0.07 in 1 vol% HMDS/scCO2, and 2.57 ± 0.06 in pure liquid HMDS, demonstrating partial or complete repair after plasma ashing. Processing with supercritical CO2 yielded the best performance based on resistance to moisture readsorption, contact angle, dielectric constant, resource consumption, and processing time.

Original languageEnglish (US)
Title of host publicationCleaning Technology in Semiconductor Device Manufacturing IX
PublisherElectrochemical Society Inc.
Pages293-300
Number of pages8
Edition3
ISBN (Electronic)9781607685395
StatePublished - 2006
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameECS Transactions
Number3
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

ASJC Scopus subject areas

  • Engineering(all)

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