Repair of porous methyl-substituted silicon dioxide films using supercritical CO2

Bo Xie; Anthony J. Muscat

Repair of porous methyl-substituted silicon dioxide films using supercritical CO₂

Bo Xie, Anthony J. Muscat

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The repair of porous methyl-substituted silicon dioxide films after plasma processing was investigated using hexamethyldisilazane (HMDS) dissolved in liquid and supercritical carbon dioxide. The films were cured, blanket methylsilsesquioxane (MSQ) layers (JSR LKD 5109). An ashed film treated with a HMDS/supercritical carbon dioxide (scCO₂) mixture was stable for thirty days without readsorbing moisture from the ambient as shown by both Fourier transform infrared (FTIK) spectroscopy and contact angle measurements, whereas a film annealed to 360°C in nitrogen for 2 min readsorbed moisture quickly over 10 days. The film thickness increased by 2-5 nm and the surfaces were Hydrophobic after processing with HMDS. The dielectric constant of metal-insulator-semiconductor capacitors was 2.89 ± 0.08 in 1 vol% HMDS/liquid CO₂, 2.55 ± 0.07 in 1 vol% HMDS/scCO₂, and 2.57 ± 0.06 in pure liquid HMDS, demonstrating partial or complete repair after plasma ashing. Processing with supercritical CO₂ yielded the best performance based on resistance to moisture readsorption, contact angle, dielectric constant, resource consumption, and processing time.

Original language	English (US)
Title of host publication	Cleaning Technology in Semiconductor Device Manufacturing IX
Publisher	Electrochemical Society Inc.
Pages	293-300
Number of pages	8
Edition	3
ISBN (Electronic)	9781607685395
State	Published - 2006
Event	9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States Duration: Oct 16 2005 → Oct 21 2005

Publication series

Name	ECS Transactions
Number	3
Volume	1
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society
Country/Territory	United States
City	Los Angeles, CA
Period	10/16/05 → 10/21/05

ASJC Scopus subject areas

General Engineering

Cite this

Xie, B & Muscat, AJ 2006, Repair of porous methyl-substituted silicon dioxide films using supercritical CO₂. in Cleaning Technology in Semiconductor Device Manufacturing IX. 3 edn, ECS Transactions, no. 3, vol. 1, Electrochemical Society Inc., pp. 293-300, 9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society, Los Angeles, CA, United States, 10/16/05.

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abstract = "The repair of porous methyl-substituted silicon dioxide films after plasma processing was investigated using hexamethyldisilazane (HMDS) dissolved in liquid and supercritical carbon dioxide. The films were cured, blanket methylsilsesquioxane (MSQ) layers (JSR LKD 5109). An ashed film treated with a HMDS/supercritical carbon dioxide (scCO2) mixture was stable for thirty days without readsorbing moisture from the ambient as shown by both Fourier transform infrared (FTIK) spectroscopy and contact angle measurements, whereas a film annealed to 360°C in nitrogen for 2 min readsorbed moisture quickly over 10 days. The film thickness increased by 2-5 nm and the surfaces were Hydrophobic after processing with HMDS. The dielectric constant of metal-insulator-semiconductor capacitors was 2.89 ± 0.08 in 1 vol% HMDS/liquid CO2, 2.55 ± 0.07 in 1 vol% HMDS/scCO2, and 2.57 ± 0.06 in pure liquid HMDS, demonstrating partial or complete repair after plasma ashing. Processing with supercritical CO2 yielded the best performance based on resistance to moisture readsorption, contact angle, dielectric constant, resource consumption, and processing time.",

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