Repair and capping of porous MSQ films using chlorosilanes and supercritical CO 2

B. Xie; L. Choate; A. J. Muscat

doi:10.1016/j.mee.2005.04.090

Repair and capping of porous MSQ films using chlorosilanes and supercritical CO ₂

B. Xie
, L. Choate
, A. J. Muscat

Research output: Contribution to journal › Conference article › peer-review

18 Scopus citations

Abstract

Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements were used to investigate repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of chlorosilanes in the form of R _4-nSiX _n, where R is a methyl group and X is chlorine (trimethylchlorosilane-TMCS, dimethyldichlorosilane-DMDCS, and methyltrichlorosilane-MTCS), dissolved in supercritical CO ₂ (scCO ₂). All three chemicals deposited methylsilyl (-O-Si-CH ₃) moieties on the surface by reaction with both lone and H-bonded silanol (SiO-H) groups on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the order TMCS < MTCS < DMDCS. Electrical measurements of the dielectric constant k of capacitors increased in the order TMCS 2.59 ± 0.05, DMDCS 2.88 ± 0.13, and MTCS 3.23 ± 0.11. The bi- or tri-functionality of the molecules with more reactive head groups produced intermolecular linking, but not all of the silanol SiO-H groups in these layers could condense, which mitigated the effect of packing density on k. Ti CVD showed that the mesopores of MSQ were capped after DMDCS and MTCS processes.

Original language	English (US)
Pages (from-to)	349-352
Number of pages	4
Journal	Microelectronic Engineering
Volume	80
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.090
State	Published - Jun 17 2005
Externally published	Yes
Event	14th Biennial Conference on Insulating Films on Semiconductors - Duration: Jun 22 2005 → Jun 24 2005

Keywords

Capping
DMDCS
MTCS
Porous MSQ
Repair
Supercritical carbon dioxide
TMCS
Ti CVD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2005.04.090

Cite this

@article{7e02fa767eee4bf48224ec4deb3a64db,

title = "Repair and capping of porous MSQ films using chlorosilanes and supercritical CO 2 ",

abstract = "Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements were used to investigate repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of chlorosilanes in the form of R 4-nSiX n, where R is a methyl group and X is chlorine (trimethylchlorosilane-TMCS, dimethyldichlorosilane-DMDCS, and methyltrichlorosilane-MTCS), dissolved in supercritical CO 2 (scCO 2). All three chemicals deposited methylsilyl (-O-Si-CH 3) moieties on the surface by reaction with both lone and H-bonded silanol (SiO-H) groups on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the order TMCS < MTCS < DMDCS. Electrical measurements of the dielectric constant k of capacitors increased in the order TMCS 2.59 ± 0.05, DMDCS 2.88 ± 0.13, and MTCS 3.23 ± 0.11. The bi- or tri-functionality of the molecules with more reactive head groups produced intermolecular linking, but not all of the silanol SiO-H groups in these layers could condense, which mitigated the effect of packing density on k. Ti CVD showed that the mesopores of MSQ were capped after DMDCS and MTCS processes.",

keywords = "Capping, DMDCS, MTCS, Porous MSQ, Repair, Supercritical carbon dioxide, TMCS, Ti CVD",

author = "B. Xie and L. Choate and Muscat, \{A. J.\}",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.090",

language = "English (US)",

volume = "80",

pages = "349--352",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "SUPPL.",

note = "14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

}

TY - JOUR

T1 - Repair and capping of porous MSQ films using chlorosilanes and supercritical CO 2

AU - Xie, B.

AU - Choate, L.

AU - Muscat, A. J.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements were used to investigate repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of chlorosilanes in the form of R 4-nSiX n, where R is a methyl group and X is chlorine (trimethylchlorosilane-TMCS, dimethyldichlorosilane-DMDCS, and methyltrichlorosilane-MTCS), dissolved in supercritical CO 2 (scCO 2). All three chemicals deposited methylsilyl (-O-Si-CH 3) moieties on the surface by reaction with both lone and H-bonded silanol (SiO-H) groups on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the order TMCS < MTCS < DMDCS. Electrical measurements of the dielectric constant k of capacitors increased in the order TMCS 2.59 ± 0.05, DMDCS 2.88 ± 0.13, and MTCS 3.23 ± 0.11. The bi- or tri-functionality of the molecules with more reactive head groups produced intermolecular linking, but not all of the silanol SiO-H groups in these layers could condense, which mitigated the effect of packing density on k. Ti CVD showed that the mesopores of MSQ were capped after DMDCS and MTCS processes.

AB - Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements were used to investigate repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of chlorosilanes in the form of R 4-nSiX n, where R is a methyl group and X is chlorine (trimethylchlorosilane-TMCS, dimethyldichlorosilane-DMDCS, and methyltrichlorosilane-MTCS), dissolved in supercritical CO 2 (scCO 2). All three chemicals deposited methylsilyl (-O-Si-CH 3) moieties on the surface by reaction with both lone and H-bonded silanol (SiO-H) groups on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the order TMCS < MTCS < DMDCS. Electrical measurements of the dielectric constant k of capacitors increased in the order TMCS 2.59 ± 0.05, DMDCS 2.88 ± 0.13, and MTCS 3.23 ± 0.11. The bi- or tri-functionality of the molecules with more reactive head groups produced intermolecular linking, but not all of the silanol SiO-H groups in these layers could condense, which mitigated the effect of packing density on k. Ti CVD showed that the mesopores of MSQ were capped after DMDCS and MTCS processes.

KW - Capping

KW - DMDCS

KW - MTCS

KW - Porous MSQ

KW - Repair

KW - Supercritical carbon dioxide

KW - TMCS

KW - Ti CVD

UR - https://www.scopus.com/pages/publications/19944372735

UR - https://www.scopus.com/pages/publications/19944372735#tab=citedBy

U2 - 10.1016/j.mee.2005.04.090

DO - 10.1016/j.mee.2005.04.090

M3 - Conference article

AN - SCOPUS:19944372735

SN - 0167-9317

VL - 80

SP - 349

EP - 352

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005

ER -