Repair and capping of porous MSQ films using chlorosilanes and supercritical CO 2

B. Xie, L. Choate, A. J. Muscat

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations


Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, goniometry, and electrical measurements were used to investigate repair and capping of porous methylsilsesquioxane (JSR LKD 5109) low-k films using a series of chlorosilanes in the form of R 4-nSiX n, where R is a methyl group and X is chlorine (trimethylchlorosilane-TMCS, dimethyldichlorosilane-DMDCS, and methyltrichlorosilane-MTCS), dissolved in supercritical CO 2 (scCO 2). All three chemicals deposited methylsilyl (-O-Si-CH 3) moieties on the surface by reaction with both lone and H-bonded silanol (SiO-H) groups on the surface of oxygen ashed porous methylsilsesquioxane (p-MSQ) films. Spectroscopic ellipsometry and goniometry showed that the total film thickness and contact angle increased in the order TMCS < MTCS < DMDCS. Electrical measurements of the dielectric constant k of capacitors increased in the order TMCS 2.59 ± 0.05, DMDCS 2.88 ± 0.13, and MTCS 3.23 ± 0.11. The bi- or tri-functionality of the molecules with more reactive head groups produced intermolecular linking, but not all of the silanol SiO-H groups in these layers could condense, which mitigated the effect of packing density on k. Ti CVD showed that the mesopores of MSQ were capped after DMDCS and MTCS processes.

Original languageEnglish (US)
Pages (from-to)349-352
Number of pages4
JournalMicroelectronic Engineering
Issue numberSUPPL.
StatePublished - Jun 17 2005
Externally publishedYes
Event14th Biennial Conference on Insulating Films on Semiconductors -
Duration: Jun 22 2005Jun 24 2005


  • Capping
  • MTCS
  • Porous MSQ
  • Repair
  • Supercritical carbon dioxide
  • TMCS
  • Ti CVD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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