Relation between interband dipole and momentum matrix elements in semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The relation between dipole and momentum matrix elements in crystals, treated with periodic boundary conditions, is revisited. A correction term to standard expressions is found to be large for bulk GaAs, small for THz transitions.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2014
PublisherOptical Society of American (OSA)
ISBN (Print)9781557529992
StatePublished - 2014
EventCLEO: Science and Innovations, CLEO_SI 2014 - San Jose, CA, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherCLEO: Science and Innovations, CLEO_SI 2014
Country/TerritoryUnited States
CitySan Jose, CA
Period6/8/146/13/14

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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