Recent advances in Sb-based midwave-infrared lasers

T. C. Hasenberg; R. H. Miles; A. R. Kost; L. West

doi:10.1109/3.605563

Recent advances in Sb-based midwave-infrared lasers

T. C. Hasenberg
, R. H. Miles
, A. R. Kost
, L. West

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-μm diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-μm devices. Typical pulsed output powers for these devices at 200 K are over 50 mW.

Original language	English (US)
Pages (from-to)	1403-1406
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	33
Issue number	8
DOIs	https://doi.org/10.1109/3.605563
State	Published - Aug 1997
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.605563

Cite this

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title = "Recent advances in Sb-based midwave-infrared lasers",

abstract = "Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-μm diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-μm devices. Typical pulsed output powers for these devices at 200 K are over 50 mW.",

author = "Hasenberg, \{T. C.\} and Miles, \{R. H.\} and Kost, \{A. R.\} and L. West",

note = "Funding Information: Manuscript received October 24, 1996; revised April 7, 1997. This work was supported in part by the Air Force Phillips Laboratory under Contract F29601-93-C-0037. The authors are with Hughes Research Laboratories, Malibu, CA 90265 USA. Publisher Item Identifier S 0018-9197(97)05440-7.",

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AU - Miles, R. H.

AU - Kost, A. R.

AU - West, L.

N1 - Funding Information: Manuscript received October 24, 1996; revised April 7, 1997. This work was supported in part by the Air Force Phillips Laboratory under Contract F29601-93-C-0037. The authors are with Hughes Research Laboratories, Malibu, CA 90265 USA. Publisher Item Identifier S 0018-9197(97)05440-7.

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N2 - Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-μm diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-μm devices. Typical pulsed output powers for these devices at 200 K are over 50 mW.

AB - Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-μm diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-μm devices. Typical pulsed output powers for these devices at 200 K are over 50 mW.

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Recent advances in Sb-based midwave-infrared lasers

Abstract

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