Recent advances in Sb-based midwave-infrared lasers

T. C. Hasenberg, R. H. Miles, A. R. Kost, L. West

Research output: Contribution to journalArticlepeer-review

74 Scopus citations

Abstract

Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-μm diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-μm devices. Typical pulsed output powers for these devices at 200 K are over 50 mW.

Original languageEnglish (US)
Pages (from-to)1403-1406
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume33
Issue number8
DOIs
StatePublished - Aug 1997
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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