Abstract
Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-μm diodes. The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's). InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers. We have observed pulsed laser operation up to 255 K with 3.2-μm devices. Typical pulsed output powers for these devices at 200 K are over 50 mW.
Original language | English (US) |
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Pages (from-to) | 1403-1406 |
Number of pages | 4 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 33 |
Issue number | 8 |
DOIs | |
State | Published - Aug 1997 |
Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering