Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation

Alexandre Laurain; Maik Scheller; Tsuei Lian Wang; Jorg Hader; Jerome V. Moloney; Bernd Heinen; Bernardette Kunert; Wolfgang Stolz

doi:10.1117/12.2018310

Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation

Alexandre Laurain
, Maik Scheller
, Tsuei Lian Wang
, Jorg Hader
, Jerome V. Moloney
, Bernd Heinen
, Bernardette Kunert
, Wolfgang Stolz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We report on our research in power scaling VECSEL around 1 μm to exceed 100W per chip. Recently, we have utilized these optimized VECSEL chips to achieve a new record for a mode-locked VECSEL. The output power of the laser was 3.4W. This corresponds to a pulse energy of 7.5nJ and a pulse peak power of 13.3kW. Both are record values for a semiconductor laser in the femtosecond regime. These optimized structures have also been used to demonstrate high power operation with a highly coherent TEM₀₀ mode and to demonstrate a record single frequency output power of 15W.

Original language	English (US)
Title of host publication	Laser Technology for Defense and Security IX
DOIs	https://doi.org/10.1117/12.2018310
State	Published - 2013
Event	Laser Technology for Defense and Security IX - Baltimore, MD, United States Duration: Apr 30 2013 → May 1 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8733
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Laser Technology for Defense and Security IX
Country/Territory	United States
City	Baltimore, MD
Period	4/30/13 → 5/1/13

Keywords

Coherence
Femtosecond Pulse Generation
High Power
Mode-locking
OPSL
Quantum-well SESAM
Semiconductor
Single frequency
VECSEL

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2018310

Cite this

Laurain, A., Scheller, M., Wang, T. L., Hader, J., Moloney, J. V., Heinen, B., Kunert, B., & Stolz, W. (2013). Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation. In Laser Technology for Defense and Security IX Article 873303 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8733). https://doi.org/10.1117/12.2018310

Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation. / Laurain, Alexandre; Scheller, Maik; Wang, Tsuei Lian et al.
Laser Technology for Defense and Security IX. 2013. 873303 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8733).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Laurain, A, Scheller, M, Wang, TL, Hader, J , Moloney, JV, Heinen, B, Kunert, B & Stolz, W 2013, Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation. in Laser Technology for Defense and Security IX., 873303, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8733, Laser Technology for Defense and Security IX, Baltimore, MD, United States, 4/30/13. https://doi.org/10.1117/12.2018310

Laurain A, Scheller M, Wang TL, Hader J , Moloney JV, Heinen B et al. Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation. In Laser Technology for Defense and Security IX. 2013. 873303. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2018310

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title = "Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation",

abstract = "We report on our research in power scaling VECSEL around 1 μm to exceed 100W per chip. Recently, we have utilized these optimized VECSEL chips to achieve a new record for a mode-locked VECSEL. The output power of the laser was 3.4W. This corresponds to a pulse energy of 7.5nJ and a pulse peak power of 13.3kW. Both are record values for a semiconductor laser in the femtosecond regime. These optimized structures have also been used to demonstrate high power operation with a highly coherent TEM00 mode and to demonstrate a record single frequency output power of 15W.",

keywords = "Coherence, Femtosecond Pulse Generation, High Power, Mode-locking, OPSL, Quantum-well SESAM, Semiconductor, Single frequency, VECSEL",

author = "Alexandre Laurain and Maik Scheller and Wang, \{Tsuei Lian\} and Jorg Hader and Moloney, \{Jerome V.\} and Bernd Heinen and Bernardette Kunert and Wolfgang Stolz",

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AU - Laurain, Alexandre

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AU - Hader, Jorg

AU - Moloney, Jerome V.

AU - Heinen, Bernd

AU - Kunert, Bernardette

AU - Stolz, Wolfgang

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N2 - We report on our research in power scaling VECSEL around 1 μm to exceed 100W per chip. Recently, we have utilized these optimized VECSEL chips to achieve a new record for a mode-locked VECSEL. The output power of the laser was 3.4W. This corresponds to a pulse energy of 7.5nJ and a pulse peak power of 13.3kW. Both are record values for a semiconductor laser in the femtosecond regime. These optimized structures have also been used to demonstrate high power operation with a highly coherent TEM00 mode and to demonstrate a record single frequency output power of 15W.

AB - We report on our research in power scaling VECSEL around 1 μm to exceed 100W per chip. Recently, we have utilized these optimized VECSEL chips to achieve a new record for a mode-locked VECSEL. The output power of the laser was 3.4W. This corresponds to a pulse energy of 7.5nJ and a pulse peak power of 13.3kW. Both are record values for a semiconductor laser in the femtosecond regime. These optimized structures have also been used to demonstrate high power operation with a highly coherent TEM00 mode and to demonstrate a record single frequency output power of 15W.

KW - Coherence

KW - Femtosecond Pulse Generation

KW - High Power

KW - Mode-locking

KW - OPSL

KW - Quantum-well SESAM

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KW - Single frequency

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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Recent advances in power scaling of high-power optically-pumped semiconductor lasers for ultrashort pulse generation and continuous wave single frequency operation

Abstract

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Keywords

ASJC Scopus subject areas

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