Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure

Michael J. Hill; Richard W. Ziolkowski; John Papapolymerou

doi:10.1109/EUMA.2000.338778

Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure

Michael J. Hill, Richard W. Ziolkowski, John Papapolymerou

Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in a MBG crystal, the transmission properties of the crystal can be changed. Using this concept, a microwave band gap crystal utilizing PIN diode defect structures has been simulated, fabricated, and tested. Through the control of the PIN diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with FDTD simulation results.

Original language	English (US)
DOIs	https://doi.org/10.1109/EUMA.2000.338778
State	Published - 2000
Event	2000 30th European Microwave Conference, EuMC 2000 - Paris, France Duration: Oct 2 2000 → Oct 5 2000

Other

Other	2000 30th European Microwave Conference, EuMC 2000
Country/Territory	France
City	Paris
Period	10/2/00 → 10/5/00

Keywords

Controlled defect
Microwave band gap

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EUMA.2000.338778

Cite this

@conference{6398eb39b0f748d1b173cf6c03a4993d,

title = "Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure",

abstract = "Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in a MBG crystal, the transmission properties of the crystal can be changed. Using this concept, a microwave band gap crystal utilizing PIN diode defect structures has been simulated, fabricated, and tested. Through the control of the PIN diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with FDTD simulation results.",

keywords = "Controlled defect, Microwave band gap",

author = "Hill, {Michael J.} and Ziolkowski, {Richard W.} and John Papapolymerou",

year = "2000",

doi = "10.1109/EUMA.2000.338778",

language = "English (US)",

note = "2000 30th European Microwave Conference, EuMC 2000 ; Conference date: 02-10-2000 Through 05-10-2000",

}

TY - CONF

T1 - Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure

AU - Hill, Michael J.

AU - Ziolkowski, Richard W.

AU - Papapolymerou, John

PY - 2000

Y1 - 2000

N2 - Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in a MBG crystal, the transmission properties of the crystal can be changed. Using this concept, a microwave band gap crystal utilizing PIN diode defect structures has been simulated, fabricated, and tested. Through the control of the PIN diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with FDTD simulation results.

AB - Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in a MBG crystal, the transmission properties of the crystal can be changed. Using this concept, a microwave band gap crystal utilizing PIN diode defect structures has been simulated, fabricated, and tested. Through the control of the PIN diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with FDTD simulation results.

KW - Controlled defect

KW - Microwave band gap

UR - http://www.scopus.com/inward/record.url?scp=84897531513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897531513&partnerID=8YFLogxK

U2 - 10.1109/EUMA.2000.338778

DO - 10.1109/EUMA.2000.338778

M3 - Paper

AN - SCOPUS:84897531513

T2 - 2000 30th European Microwave Conference, EuMC 2000

Y2 - 2 October 2000 through 5 October 2000

ER -

Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure

Abstract

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Keywords

ASJC Scopus subject areas

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