Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions

W. G. Wang; C. Ni; A. Rumaiz; Y. Wang; X. Fan; T. Moriyama; R. Cao; Q. Y. Wen; H. W. Zhang; John Q. Xiao

doi:10.1063/1.2903147

Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions

W. G. Wang, C. Ni, A. Rumaiz, Y. Wang, X. Fan, T. Moriyama, R. Cao, Q. Y. Wen, H. W. Zhang, John Q. Xiao

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43 Scopus citations

Abstract

We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.

Original language	English (US)
Article number	152501
Journal	Applied Physics Letters
Volume	92
Issue number	15
DOIs	https://doi.org/10.1063/1.2903147
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2903147

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title = "Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions",

abstract = "We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.",

author = "Wang, {W. G.} and C. Ni and A. Rumaiz and Y. Wang and X. Fan and T. Moriyama and R. Cao and Wen, {Q. Y.} and Zhang, {H. W.} and Xiao, {John Q.}",

note = "Funding Information: The authors are grateful to Dr. W. Pong for the stimulating discussion. This work was supported by NSF DMR Grant No. 0405136, DOE DE-FG02-07ER46374, and NSFC Grant No. 60721001. ",

year = "2008",

doi = "10.1063/1.2903147",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions

AU - Wang, W. G.

AU - Ni, C.

AU - Rumaiz, A.

AU - Wang, Y.

AU - Fan, X.

AU - Moriyama, T.

AU - Cao, R.

AU - Wen, Q. Y.

AU - Zhang, H. W.

AU - Xiao, John Q.

N1 - Funding Information: The authors are grateful to Dr. W. Pong for the stimulating discussion. This work was supported by NSF DMR Grant No. 0405136, DOE DE-FG02-07ER46374, and NSFC Grant No. 60721001.

PY - 2008

Y1 - 2008

N2 - We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.

AB - We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.

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DO - 10.1063/1.2903147

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JF - Applied Physics Letters

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Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions

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