Abstract
MoSx films have been deposited by r.f. sputtering of an Mo target in an H2S/Ar atmosphere. Relationships between process conditions and chemical composition, crystalline orientation, and morphology suggest that control of MoSx film properties are summarized. Preparation of dense, thick MoSx films with x>1.8 and with preferred "basal" orientation is shown.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 422-426 |
| Number of pages | 5 |
| Journal | Surface and Coatings Technology |
| Volume | 68-69 |
| Issue number | C |
| DOIs | |
| State | Published - Dec 1994 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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