Abstract
MoSx films have been deposited by r.f. sputtering of an Mo target in an H2S/Ar atmosphere. Relationships between process conditions and chemical composition, crystalline orientation, and morphology suggest that control of MoSx film properties are summarized. Preparation of dense, thick MoSx films with x>1.8 and with preferred "basal" orientation is shown.
Original language | English (US) |
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Pages (from-to) | 422-426 |
Number of pages | 5 |
Journal | Surface and Coatings Technology |
Volume | 68-69 |
Issue number | C |
DOIs | |
State | Published - Dec 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry