@inproceedings{8e210a7050d94340ad8dc37eda5f83c2,
title = "Reaction of aqueous tetramethylammonium sulfide on SiGe(100) 25% as a function of pH",
abstract = "Tetramethylammonium sulfide [(CH3)4N]2S dissociates in water yielding tetramethylammonium cation, which does not hydrolyze, and sulfide anion (S2-), which undergoes hydrolysis reactions forming HS- and H2S. The reaction of these three sources of S with the surface of SiGe(lOO) 25% was investigated by X-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD), and a speciation model as a function of pH. Lowering the pH of dilute aqueous TMAS increased the H2S concentration and the S coverage on the surface increased in tandem. Covalent Ge-S bonds formed, and the highest S/elemental Ge molar ratio was 0.66 at pH 2-3. The surface termination was mixed, that is H-SiGe-SH. H2S desorbed in a state with a peak temperature at about 550 K and GeS in a peak at about 600 K. The Ge atoms on the SiGe surface were preferentially oxidized in aqueous TMAS based on the O/Si and Ge13+/Ge molar ratios calculated from XPS data compared to control surfaces.",
author = "Zhonghao Zhang and Muscat, {A. J.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",
year = "2019",
doi = "10.1149/09202.0047ecst",
language = "English (US)",
isbn = "9781607688761",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "47--56",
editor = "Koichiro Saga and Mertens, {Paul W.} and Takeshi Hattori and Jerzy Ruzyllo and Muscat, {Anthony J.}",
booktitle = "16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019",
edition = "2",
}