@inproceedings{4899cdd8efd542d58cd70e0eb274521a,
title = "Reaction mechanisms on binary III-V semiconductor surfaces during etching, passivation, and deposition",
abstract = "Etching of the natives oxides of the III-V semiconductor InGaAs using aqueous and gas phase HF were compared using x-ray photoelectron spectroscopy, ellipsometry, and atomic force microscopy. The mechanisms in both phases are driven by bond polarity. This explains why the surface is terminated by the group V atom, in this case arsenic. The solubility of the fluorides of the substrate atoms in water removes the reaction products. The fluorides of Ga were not volatile at room temperature and remain on the surface after gas phase etching. Annealing to 170 °C desorbed these fluorides. Atomic layer deposition of Al2O3 converted the oxides left on the surface and etched the fluorides. The interface was indium rich after aqueous phase HF etching but near stoichiometric after gas phase HF etching.",
author = "Muscat, {A. J.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",
year = "2015",
doi = "10.1149/06908.0217ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "8",
pages = "217--226",
editor = "T. Hattori and Mertens, {P. W.} and Novak, {R. E.} and J. Ruzyllo",
booktitle = "Semiconductor Cleaning Science and Technology 14, SCST 14",
edition = "8",
}