Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films

Xin Zhang; Tone Yi Zhang; Yitshak Zohar

Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films

Xin Zhang, Tone Yi Zhang, Yitshak Zohar

Research output: Contribution to journal › Conference article › peer-review

Abstract

The residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

Original language	English (US)
Pages (from-to)	27-32
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	546
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS) - Boston, MA, USA Duration: Dec 1 1998 → Dec 2 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{7210cf55ebe24193922e7f9ad8615525,

title = "Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films",

abstract = "The residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.",

author = "Xin Zhang and Zhang, {Tone Yi} and Yitshak Zohar",

year = "1999",

language = "English (US)",

volume = "546",

pages = "27--32",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS) ; Conference date: 01-12-1998 Through 02-12-1998",

}

TY - JOUR

T1 - Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films

AU - Zhang, Xin

AU - Zhang, Tone Yi

AU - Zohar, Yitshak

PY - 1999

Y1 - 1999

N2 - The residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

AB - The residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033323874&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033323874

SN - 0272-9172

VL - 546

SP - 27

EP - 32

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS)

Y2 - 1 December 1998 through 2 December 1998

ER -

Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films

Abstract

ASJC Scopus subject areas

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