Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel Junctions

S. Zhang; P. M. Levy; A. C. Marley; S. S.P. Parkin

doi:10.1103/PhysRevLett.79.3744

Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel Junctions

S. Zhang, P. M. Levy, A. C. Marley, S. S.P. Parkin

Research output: Contribution to journal › Article › peer-review

522 Scopus citations

Abstract

A zero bias anomaly is observed at low temperatures in the current-voltage characteristics of ferromagnetic tunnel junctions; the drop in the junction resistance with increasing bias voltage is greater for antiparallel alignment of the magnetic moments of the magnetic electrodes than for parallel alignment. The resulting decrease in the magnetoresistance of the junction is accounted for by spin excitations localized at the interfaces between the magnetic electrodes and the tunnel barrier.

Original language	English (US)
Pages (from-to)	3744-3747
Number of pages	4
Journal	Physical review letters
Volume	79
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.79.3744
State	Published - Nov 10 1997
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.79.3744

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title = "Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel Junctions",

abstract = "A zero bias anomaly is observed at low temperatures in the current-voltage characteristics of ferromagnetic tunnel junctions; the drop in the junction resistance with increasing bias voltage is greater for antiparallel alignment of the magnetic moments of the magnetic electrodes than for parallel alignment. The resulting decrease in the magnetoresistance of the junction is accounted for by spin excitations localized at the interfaces between the magnetic electrodes and the tunnel barrier.",

author = "S. Zhang and Levy, {P. M.} and Marley, {A. C.} and Parkin, {S. S.P.}",

year = "1997",

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doi = "10.1103/PhysRevLett.79.3744",

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AU - Zhang, S.

AU - Levy, P. M.

AU - Marley, A. C.

AU - Parkin, S. S.P.

PY - 1997/11/10

Y1 - 1997/11/10

N2 - A zero bias anomaly is observed at low temperatures in the current-voltage characteristics of ferromagnetic tunnel junctions; the drop in the junction resistance with increasing bias voltage is greater for antiparallel alignment of the magnetic moments of the magnetic electrodes than for parallel alignment. The resulting decrease in the magnetoresistance of the junction is accounted for by spin excitations localized at the interfaces between the magnetic electrodes and the tunnel barrier.

AB - A zero bias anomaly is observed at low temperatures in the current-voltage characteristics of ferromagnetic tunnel junctions; the drop in the junction resistance with increasing bias voltage is greater for antiparallel alignment of the magnetic moments of the magnetic electrodes than for parallel alignment. The resulting decrease in the magnetoresistance of the junction is accounted for by spin excitations localized at the interfaces between the magnetic electrodes and the tunnel barrier.

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Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel Junctions

Abstract

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