TY - JOUR
T1 - Quasi-One-Dimensional Charge Transport Can Lead to Nonlinear Current Characteristics in Organic Field-Effect Transistors
AU - Li, Haoyuan
AU - Brédas, Jean Luc
N1 - Publisher Copyright:
Copyright © 2018 American Chemical Society.
PY - 2018/11/15
Y1 - 2018/11/15
N2 - Nonlinearity in the current characteristics of organic field-effect transistor (OFET) devices has become a serious issue for accurate evaluation of the charge-carrier mobilities in organic semiconductors. In particular, in the case of several high-mobility materials, a kink appears in the transfer curves, and this nonlinearity has been generally interpreted as the result of poor contacts. Here, we describe another possible origin for the appearance of such a kink. Extensive molecular-scale device simulations indeed demonstrate that the quasi-1D nature of charge transport often encountered in organic crystals or highly oriented polymers can lead to significant transport through the bulk and result in nonlinearity of the transfer current characteristics if the actual charge injection is away from the channel. When this is the case, the low-gate voltage regime in fact does not overestimate the charge mobility along the channel direction.
AB - Nonlinearity in the current characteristics of organic field-effect transistor (OFET) devices has become a serious issue for accurate evaluation of the charge-carrier mobilities in organic semiconductors. In particular, in the case of several high-mobility materials, a kink appears in the transfer curves, and this nonlinearity has been generally interpreted as the result of poor contacts. Here, we describe another possible origin for the appearance of such a kink. Extensive molecular-scale device simulations indeed demonstrate that the quasi-1D nature of charge transport often encountered in organic crystals or highly oriented polymers can lead to significant transport through the bulk and result in nonlinearity of the transfer current characteristics if the actual charge injection is away from the channel. When this is the case, the low-gate voltage regime in fact does not overestimate the charge mobility along the channel direction.
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U2 - 10.1021/acs.jpclett.8b02972
DO - 10.1021/acs.jpclett.8b02972
M3 - Article
C2 - 30380867
AN - SCOPUS:85056620466
SN - 1948-7185
VL - 9
SP - 6550
EP - 6555
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 22
ER -