Quantum-well intermixing for optoelectronic integration using high energy ion implantation

S. Charbonneau; P. J. Poole; P. G. Piva; G. C. Aers; E. S. Koteles; M. Fallahi; J. J. He; J. P. McCaffrey; M. Buchanan; M. Dion; R. D. Goldberg; I. V. Mitchell

doi:10.1063/1.359948

Quantum-well intermixing for optoelectronic integration using high energy ion implantation

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J. J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, I. V. Mitchell

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As⁴⁺) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.

Original language	English (US)
Pages (from-to)	3697-3705
Number of pages	9
Journal	Journal of Applied Physics
Volume	78
Issue number	6
DOIs	https://doi.org/10.1063/1.359948
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Quantum-well intermixing for optoelectronic integration using high energy ion implantation",

abstract = "The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.",

author = "S. Charbonneau and Poole, {P. J.} and Piva, {P. G.} and Aers, {G. C.} and Koteles, {E. S.} and M. Fallahi and He, {J. J.} and McCaffrey, {J. P.} and M. Buchanan and M. Dion and Goldberg, {R. D.} and Mitchell, {I. V.}",

year = "1995",

doi = "10.1063/1.359948",

language = "English (US)",

volume = "78",

pages = "3697--3705",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Quantum-well intermixing for optoelectronic integration using high energy ion implantation

AU - Charbonneau, S.

AU - Poole, P. J.

AU - Piva, P. G.

AU - Aers, G. C.

AU - Koteles, E. S.

AU - Fallahi, M.

AU - He, J. J.

AU - McCaffrey, J. P.

AU - Buchanan, M.

AU - Dion, M.

AU - Goldberg, R. D.

AU - Mitchell, I. V.

PY - 1995

Y1 - 1995

N2 - The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.

AB - The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.

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DO - 10.1063/1.359948

M3 - Article

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EP - 3705

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Quantum-well intermixing for optoelectronic integration using high energy ion implantation

Abstract

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