Quantum dots in the strong confinement regime: A model system for gain in quasi zero-dimensional semiconductors

H. Giessen; U. Woggon; B. Fluegel; G. Mohs; Y. Z. Hu; S. W. Koch; N. Peyghambarian

doi:10.1016/0301-0104(96)00193-0

Quantum dots in the strong confinement regime: A model system for gain in quasi zero-dimensional semiconductors

H. Giessen
, U. Woggon
, B. Fluegel
, G. Mohs
, Y. Z. Hu
, S. W. Koch
, N. Peyghambarian

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a combination of a multitude of one-electron-hole pair and two-electron-hole pair transitions and inhomogeneous broadening, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

Original language	English (US)
Pages (from-to)	71-78
Number of pages	8
Journal	Chemical Physics
Volume	210
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/0301-0104(96)00193-0
State	Published - Oct 1 1996

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/0301-0104(96)00193-0

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abstract = "We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a combination of a multitude of one-electron-hole pair and two-electron-hole pair transitions and inhomogeneous broadening, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.",

author = "H. Giessen and U. Woggon and B. Fluegel and G. Mohs and Hu, \{Y. Z.\} and Koch, \{S. W.\} and N. Peyghambarian",

year = "1996",

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T2 - A model system for gain in quasi zero-dimensional semiconductors

AU - Giessen, H.

AU - Woggon, U.

AU - Fluegel, B.

AU - Mohs, G.

AU - Hu, Y. Z.

AU - Koch, S. W.

AU - Peyghambarian, N.

PY - 1996/10/1

Y1 - 1996/10/1

N2 - We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a combination of a multitude of one-electron-hole pair and two-electron-hole pair transitions and inhomogeneous broadening, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

AB - We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a combination of a multitude of one-electron-hole pair and two-electron-hole pair transitions and inhomogeneous broadening, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

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UR - https://www.scopus.com/pages/publications/0030486545#tab=citedBy

U2 - 10.1016/0301-0104(96)00193-0

DO - 10.1016/0301-0104(96)00193-0

M3 - Article

AN - SCOPUS:0030486545

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SP - 71

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JO - Chemical Physics

JF - Chemical Physics

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ER -

Quantum dots in the strong confinement regime: A model system for gain in quasi zero-dimensional semiconductors

Abstract

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