Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

J. Hader; A. R. Zakharian; J. V. Moloney; T. R. Nelson; W. J. Siskaninetz; J. E. Ehret; K. Hantke; M. Hofmann; S. W. Koch

doi:10.1109/LPT.2002.1003085

Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

J. Hader
, A. R. Zakharian
, J. V. Moloney
, T. R. Nelson
, W. J. Siskaninetz
, J. E. Ehret
, K. Hantke
, M. Hofmann
, S. W. Koch

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.

Original language	English (US)
Pages (from-to)	762-764
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2002.1003085
State	Published - Jun 2002

Keywords

Gain
Photo luminescence
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2002.1003085

Cite this

@article{a30e61a650f34f34a1a786b46a725124,

title = "Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements",

abstract = "A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.",

keywords = "Gain, Photo luminescence, Semiconductor lasers",

author = "J. Hader and Zakharian, \{A. R.\} and Moloney, \{J. V.\} and Nelson, \{T. R.\} and Siskaninetz, \{W. J.\} and Ehret, \{J. E.\} and K. Hantke and M. Hofmann and Koch, \{S. W.\}",

note = "Funding Information: Manuscript received December 4, 2001; revised February 28, 2002. This work was supported by the U.S. Air Force Office of Scientific Research under Contract F49620-97-1-0002 and Contract F49620-98-1-0227, and by the Humboldt-and Max-Planck Societies through the Max-Planck Research Program. Growth and characterization at Air Force Research Laboratory (AFRL) was supported under Air Force Office of Scientific Research (AFOSR) under Contract LRIR 2305DW01.",

year = "2002",

month = jun,

doi = "10.1109/LPT.2002.1003085",

language = "English (US)",

volume = "14",

pages = "762--764",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

AU - Hader, J.

AU - Zakharian, A. R.

AU - Moloney, J. V.

AU - Nelson, T. R.

AU - Siskaninetz, W. J.

AU - Ehret, J. E.

AU - Hantke, K.

AU - Hofmann, M.

AU - Koch, S. W.

N1 - Funding Information: Manuscript received December 4, 2001; revised February 28, 2002. This work was supported by the U.S. Air Force Office of Scientific Research under Contract F49620-97-1-0002 and Contract F49620-98-1-0227, and by the Humboldt-and Max-Planck Societies through the Max-Planck Research Program. Growth and characterization at Air Force Research Laboratory (AFRL) was supported under Air Force Office of Scientific Research (AFOSR) under Contract LRIR 2305DW01.

PY - 2002/6

Y1 - 2002/6

N2 - A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.

AB - A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.

KW - Gain

KW - Photo luminescence

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0036610962

UR - https://www.scopus.com/pages/publications/0036610962#tab=citedBy

U2 - 10.1109/LPT.2002.1003085

DO - 10.1109/LPT.2002.1003085

M3 - Article

AN - SCOPUS:0036610962

SN - 1041-1135

VL - 14

SP - 762

EP - 764

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 6

ER -

Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this