Quantitative Auger electron spectroscopy and Rutherford backscattering of potassium-implanted silicon, silica and sodium trisilicate

Brad J. Burrow; Neal R. Armstrong; Rod K. Quinn; Bruce C. Bunker; George W. Arnold; Doug R. Salmi

doi:10.1016/0378-5963(84)90336-2

Quantitative Auger electron spectroscopy and Rutherford backscattering of potassium-implanted silicon, silica and sodium trisilicate

Brad J. Burrow, Neal R. Armstrong, Rod K. Quinn, Bruce C. Bunker, George W. Arnold, Doug R. Salmi

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Samples of silicon, silica, and sodium trisilicate, which were ion implanted with potassium, were analyzed by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectroscopy (RBS). Depth profiles obtained by both techniques showed that approximately 50% of the implanted potassium migrated from the subsurface implant region to the surface for both the silica and sodium trisilicate samples. Less migration was detected for the silicon samples. Analyses of the results suggest that some of the ion migration observed in Auger depth profiles is induced by the analysis technique. With this exception, it is demonstrated that a combination of AES and RBS techniques can provide quantitative compositional analyses for altered glass surfaces.

Original language	English (US)
Pages (from-to)	167-180
Number of pages	14
Journal	Applications of Surface Science
Volume	20
Issue number	1-2
DOIs	https://doi.org/10.1016/0378-5963(84)90336-2
State	Published - Dec 1984
Externally published	Yes

ASJC Scopus subject areas

General Engineering

Access to Document

10.1016/0378-5963(84)90336-2

Cite this

@article{cd02672ce199475f8840b0353485d0f2,

title = "Quantitative Auger electron spectroscopy and Rutherford backscattering of potassium-implanted silicon, silica and sodium trisilicate",

abstract = "Samples of silicon, silica, and sodium trisilicate, which were ion implanted with potassium, were analyzed by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectroscopy (RBS). Depth profiles obtained by both techniques showed that approximately 50% of the implanted potassium migrated from the subsurface implant region to the surface for both the silica and sodium trisilicate samples. Less migration was detected for the silicon samples. Analyses of the results suggest that some of the ion migration observed in Auger depth profiles is induced by the analysis technique. With this exception, it is demonstrated that a combination of AES and RBS techniques can provide quantitative compositional analyses for altered glass surfaces.",

author = "Burrow, {Brad J.} and Armstrong, {Neal R.} and Quinn, {Rod K.} and Bunker, {Bruce C.} and Arnold, {George W.} and Salmi, {Doug R.}",

note = "Funding Information: * This work partially performed at Sandia National Laboratories ment of Energy under Contract No. DE-AC04-76DPOO789. ** Present address: US Phillips Research Laboratories, Sunnyvale. *** A US DOE facility.",

year = "1984",

month = dec,

doi = "10.1016/0378-5963(84)90336-2",

language = "English (US)",

volume = "20",

pages = "167--180",

journal = "Applications of Surface Science",

issn = "0378-5963",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Quantitative Auger electron spectroscopy and Rutherford backscattering of potassium-implanted silicon, silica and sodium trisilicate

AU - Burrow, Brad J.

AU - Armstrong, Neal R.

AU - Quinn, Rod K.

AU - Bunker, Bruce C.

AU - Arnold, George W.

AU - Salmi, Doug R.

N1 - Funding Information: * This work partially performed at Sandia National Laboratories ment of Energy under Contract No. DE-AC04-76DPOO789. ** Present address: US Phillips Research Laboratories, Sunnyvale. *** A US DOE facility.

PY - 1984/12

Y1 - 1984/12

N2 - Samples of silicon, silica, and sodium trisilicate, which were ion implanted with potassium, were analyzed by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectroscopy (RBS). Depth profiles obtained by both techniques showed that approximately 50% of the implanted potassium migrated from the subsurface implant region to the surface for both the silica and sodium trisilicate samples. Less migration was detected for the silicon samples. Analyses of the results suggest that some of the ion migration observed in Auger depth profiles is induced by the analysis technique. With this exception, it is demonstrated that a combination of AES and RBS techniques can provide quantitative compositional analyses for altered glass surfaces.

AB - Samples of silicon, silica, and sodium trisilicate, which were ion implanted with potassium, were analyzed by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectroscopy (RBS). Depth profiles obtained by both techniques showed that approximately 50% of the implanted potassium migrated from the subsurface implant region to the surface for both the silica and sodium trisilicate samples. Less migration was detected for the silicon samples. Analyses of the results suggest that some of the ion migration observed in Auger depth profiles is induced by the analysis technique. With this exception, it is demonstrated that a combination of AES and RBS techniques can provide quantitative compositional analyses for altered glass surfaces.

UR - http://www.scopus.com/inward/record.url?scp=0021596134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021596134&partnerID=8YFLogxK

U2 - 10.1016/0378-5963(84)90336-2

DO - 10.1016/0378-5963(84)90336-2

M3 - Article

AN - SCOPUS:0021596134

SN - 0378-5963

VL - 20

SP - 167

EP - 180

JO - Applications of Surface Science

JF - Applications of Surface Science

IS - 1-2

ER -

Quantitative Auger electron spectroscopy and Rutherford backscattering of potassium-implanted silicon, silica and sodium trisilicate

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this