TY - JOUR
T1 - Quadratic to linear magnetoresistance tuning in TmB4
AU - Mitra, Sreemanta
AU - Kang, Jeremy Goh Swee
AU - Shin, John
AU - Ng, Jin Quan
AU - Sunku, Sai Swaroop
AU - Kong, Tai
AU - Canfield, Paul C.
AU - Shastry, B. Sriram
AU - Sengupta, Pinaki
AU - Panagopoulos, Christos
N1 - Funding Information:
The work in Singapore was supported by the Ministry of Education, Singapore MOE2014-T2-2-112 and the Singapore National Research Foundation, Investigatorship NRF-NRFI2015-04. S.M. and J.G.S.K. acknowledge stimulating discussions with Arthur Ramirez, Alexander Petrovic, Xian Yang Tee, Jennifer Trinh, and Bhartendu Satywali. The work at UCSC was supported by the U.S. Department of Energy (BES) under Award No. DE-FG02-06ER46319. Work performed at Ames Laboratory was supported by the U.S. Department of Energy, Office of Basic Energy Science, Division of Materials Sciences and Engineering. Ames Laboratory is operated for the U.S. Department of Energy by Iowa State University under Contract No. DE-AC02-07CH11358.
Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/1/9
Y1 - 2019/1/9
N2 - The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory predicts a quadratic growth in magnetoresistance (MR) at low B and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, and two dimensional electron gas, show positive, nonsaturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angle-dependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive, and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature independent, suggestive of quantum mechanical origin.
AB - The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related technologies. In good metals, Boltzmann's theory predicts a quadratic growth in magnetoresistance (MR) at low B and saturation at high fields. On the other hand, a number of nonmagnetic materials with weak electronic correlation and low carrier concentration for metallicity, such as inhomogeneous conductors, semimetals, narrow gap semiconductors and topological insulators, and two dimensional electron gas, show positive, nonsaturating linear magnetoresistance (LMR). However, observation of LMR in single crystals of a good metal is rare. Here we present low-temperature, angle-dependent magnetotransport in single crystals of the antiferromagnetic metal, TmB4. We observe large, positive, and anisotropic MR(B), which can be tuned from quadratic to linear by changing the direction of the applied field. In view of the fact that isotropic, single crystalline metals with large Fermi surface (FS) are not expected to exhibit LMR, we attribute our observations to the anisotropic FS topology of TmB4. Furthermore, the linear MR is found to be temperature independent, suggestive of quantum mechanical origin.
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U2 - 10.1103/PhysRevB.99.045119
DO - 10.1103/PhysRevB.99.045119
M3 - Article
AN - SCOPUS:85059915749
SN - 0163-1829
VL - 99
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 4
M1 - 045119
ER -