Abstract
Semiconductor detector arrays made of CdTe/CdZnTe are expected to be the main components of future high-performance, clinical nuclear medicine imaging systems. Such systems will require small pixel-pitch and much larger numbers of pixels than are available in current semiconductor-detector cameras. We describe the motivation for developing a new readout integrated circuit, AEGIS, for use in hybrid semiconductor detector arrays, that may help spur the development of future cameras. A basic design for AEGIS is presented together with results of an HSPICE™ simulation of the performance of its unit cell. AEGIS will have a shaper-amplifier unit cell and neighbor pixel readout. Other features include the use of a single input power line with other biases generated on-board, a control register that allows digital control of all thresholds and chip configurations and an output approach that is compatible with list-mode data acquisition. An 8×8 prototype version of AEGIS is currently under development; the full AEGIS will be a 64×64 array with 300 μm pitch.
Original language | English (US) |
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Article number | 59230H |
Pages (from-to) | 1-10 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5923 |
DOIs | |
State | Published - 2005 |
Event | Penetrating Radiation Systems and Applications VII - San Diego, CA, United States Duration: Aug 1 2005 → Aug 4 2005 |
Keywords
- CZT
- CdTe
- CdZnTe
- Hybrid detector
- Medical imaging
- Nuclear medicine
- Readout integrated circuit
- Semiconductor camera
- Semiconductor detector
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering