Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering

W. G. Wang; K. J. Han; K. J. Yee; C. Ni; Q. Wen; H. W. Zhang; Y. Zhang; L. Shah; John Q. Xiao

doi:10.1063/1.2890087

Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering

W. G. Wang, K. J. Han, K. J. Yee, C. Ni, Q. Wen, H. W. Zhang, Y. Zhang, L. Shah, John Q. Xiao

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report the fabrication of (Zn,Cr)Te films at room temperature by magnetron sputtering. Various structural and elemental characterizations revealed there was only a zinc blende phase from the ZnTe host and Cr atoms were distributed uniformly in these films. The magnetization measurement by superconducting quantum interference device magnetometer clearly showed that the samples were ferromagnetic at low temperatures with Curie temperature around 150 K. The magnetic circular dichroism measurements confirmed that the observed ferromagnetism was originated from the interaction of substitutional Cr ions and ZnTe host. Transport measurement revealed typical semiconductor behaviors with the large negative magnetoresistance observed.

Original language	English (US)
Article number	102507
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2890087
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{b376f8439dcf4c9698b99b61bea29741,

title = "Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering",

abstract = "We report the fabrication of (Zn,Cr)Te films at room temperature by magnetron sputtering. Various structural and elemental characterizations revealed there was only a zinc blende phase from the ZnTe host and Cr atoms were distributed uniformly in these films. The magnetization measurement by superconducting quantum interference device magnetometer clearly showed that the samples were ferromagnetic at low temperatures with Curie temperature around 150 K. The magnetic circular dichroism measurements confirmed that the observed ferromagnetism was originated from the interaction of substitutional Cr ions and ZnTe host. Transport measurement revealed typical semiconductor behaviors with the large negative magnetoresistance observed.",

author = "Wang, {W. G.} and Han, {K. J.} and Yee, {K. J.} and C. Ni and Q. Wen and Zhang, {H. W.} and Y. Zhang and L. Shah and Xiao, {John Q.}",

note = "Funding Information: The authors are grateful to Dr. H. Saito, B. McCandless, K. Dobson, and K. Hart for valuable discussions. This work was supported by NSF DMR Grant No. 0405136. ",

year = "2008",

doi = "10.1063/1.2890087",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering

AU - Wang, W. G.

AU - Han, K. J.

AU - Yee, K. J.

AU - Ni, C.

AU - Wen, Q.

AU - Zhang, H. W.

AU - Zhang, Y.

AU - Shah, L.

AU - Xiao, John Q.

N1 - Funding Information: The authors are grateful to Dr. H. Saito, B. McCandless, K. Dobson, and K. Hart for valuable discussions. This work was supported by NSF DMR Grant No. 0405136.

PY - 2008

Y1 - 2008

N2 - We report the fabrication of (Zn,Cr)Te films at room temperature by magnetron sputtering. Various structural and elemental characterizations revealed there was only a zinc blende phase from the ZnTe host and Cr atoms were distributed uniformly in these films. The magnetization measurement by superconducting quantum interference device magnetometer clearly showed that the samples were ferromagnetic at low temperatures with Curie temperature around 150 K. The magnetic circular dichroism measurements confirmed that the observed ferromagnetism was originated from the interaction of substitutional Cr ions and ZnTe host. Transport measurement revealed typical semiconductor behaviors with the large negative magnetoresistance observed.

AB - We report the fabrication of (Zn,Cr)Te films at room temperature by magnetron sputtering. Various structural and elemental characterizations revealed there was only a zinc blende phase from the ZnTe host and Cr atoms were distributed uniformly in these films. The magnetization measurement by superconducting quantum interference device magnetometer clearly showed that the samples were ferromagnetic at low temperatures with Curie temperature around 150 K. The magnetic circular dichroism measurements confirmed that the observed ferromagnetism was originated from the interaction of substitutional Cr ions and ZnTe host. Transport measurement revealed typical semiconductor behaviors with the large negative magnetoresistance observed.

UR - http://www.scopus.com/inward/record.url?scp=40849088248&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40849088248&partnerID=8YFLogxK

U2 - 10.1063/1.2890087

DO - 10.1063/1.2890087

M3 - Article

AN - SCOPUS:40849088248

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102507

ER -

Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering

Abstract

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