Propagation Induced Dephasing in Semiconductor High-Harmonic Generation

Isak Kilen; Miroslav Kolesik; Jorg Hader; Jerome V. Moloney; Ulrich Huttner; Maria K. Hagen; Stephan W. Koch

doi:10.1103/PhysRevLett.125.083901

Propagation Induced Dephasing in Semiconductor High-Harmonic Generation

Isak Kilen, Miroslav Kolesik, Jorg Hader, Jerome V. Moloney, Ulrich Huttner, Maria K. Hagen, Stephan W. Koch

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65 Scopus citations

Abstract

The influence of propagation on the nonperturbative high-harmonic features in long-wavelength strong pulse excited semiconductors is studied using a fully microscopic approach. For sample lengths exceeding the wavelength of the exciting light, it is shown that the propagation effectively acts as a very strong additional dephasing that reduces the relative height of the emission plateau up to six orders of magnitude. This propagation induced dephasing clarifies the need to use extremely short polarization decay times for the quantitative analysis of experimental observations.

Original language	English (US)
Article number	083901
Journal	Physical review letters
Volume	125
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.125.083901
State	Published - Aug 21 2020

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.125.083901

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title = "Propagation Induced Dephasing in Semiconductor High-Harmonic Generation",

abstract = "The influence of propagation on the nonperturbative high-harmonic features in long-wavelength strong pulse excited semiconductors is studied using a fully microscopic approach. For sample lengths exceeding the wavelength of the exciting light, it is shown that the propagation effectively acts as a very strong additional dephasing that reduces the relative height of the emission plateau up to six orders of magnitude. This propagation induced dephasing clarifies the need to use extremely short polarization decay times for the quantitative analysis of experimental observations.",

author = "Isak Kilen and Miroslav Kolesik and Jorg Hader and Moloney, {Jerome V.} and Ulrich Huttner and Hagen, {Maria K.} and Koch, {Stephan W.}",

note = "Funding Information: This material is based upon work supported by the Air Force Office of Scientific Research under Award No. FA9550-17-1-0246 and a DURIP instrumentation Grant No. FA9550-18-1-0368. The Marburg research is supported by the Deutsche Forschungsgemeinschaft via the Sonderforschungsbereich 1083. Publisher Copyright: {\textcopyright} 2020 American Physical Society.",

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doi = "10.1103/PhysRevLett.125.083901",

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AU - Kilen, Isak

AU - Kolesik, Miroslav

AU - Hader, Jorg

AU - Moloney, Jerome V.

AU - Huttner, Ulrich

AU - Hagen, Maria K.

AU - Koch, Stephan W.

N1 - Funding Information: This material is based upon work supported by the Air Force Office of Scientific Research under Award No. FA9550-17-1-0246 and a DURIP instrumentation Grant No. FA9550-18-1-0368. The Marburg research is supported by the Deutsche Forschungsgemeinschaft via the Sonderforschungsbereich 1083. Publisher Copyright: © 2020 American Physical Society.

PY - 2020/8/21

Y1 - 2020/8/21

N2 - The influence of propagation on the nonperturbative high-harmonic features in long-wavelength strong pulse excited semiconductors is studied using a fully microscopic approach. For sample lengths exceeding the wavelength of the exciting light, it is shown that the propagation effectively acts as a very strong additional dephasing that reduces the relative height of the emission plateau up to six orders of magnitude. This propagation induced dephasing clarifies the need to use extremely short polarization decay times for the quantitative analysis of experimental observations.

AB - The influence of propagation on the nonperturbative high-harmonic features in long-wavelength strong pulse excited semiconductors is studied using a fully microscopic approach. For sample lengths exceeding the wavelength of the exciting light, it is shown that the propagation effectively acts as a very strong additional dephasing that reduces the relative height of the emission plateau up to six orders of magnitude. This propagation induced dephasing clarifies the need to use extremely short polarization decay times for the quantitative analysis of experimental observations.

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Propagation Induced Dephasing in Semiconductor High-Harmonic Generation

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