Production of predominantly semiconducting double-walled carbon nanotubes

The effects of growth conditions, such as methane flow rates and type of substrate on the distribution, structure and properties of nanotubes were examined. A scanning electron microscope equipped with a Raman spectrometer enabled us to obtain critical information about the structure and electrical properties of the nanotubes simultaneously, and it was shown that these were highly dependent on the methane flow rate. At a methane flow rate of 600 cc/min, we primarily obtained double-walled carbon nanotubes having predominantly semiconducting properties. At a higher methane flow rate (700 cc/min), a mixture of single-walled and double-walled carbon nanotubes was created, most of which were semiconducting. At low methane flow rates (300 and 500 cc/min), metallic multi-walled carbon nanotubes were predominated. Carbon nanotubes grown on a quartz substrate were between 4-10 μm in length, whereas those grown on silicon were longer (∼15-20 μm). The primary growth mechanism observed was base growth, although some cap growth did occur. Based on the results of this study, it is now possible to carefully control the synthesis conditions to produce carbon nanotubes that possess specific electrical properties that suit the desired application.