Abstract
A novel device for spin-current detection in semiconductors, based on the extraordinary Hall effect, is proposed. When a spin current is injected into a nonmagnetic semiconductor, it is found that a transverse electric field, or Hall voltage, is generated. The Hall voltage is proportional to the spin current in the nonmagnetic semiconductor. The proposed device can be used as a tool to investigate the fundamental spin-diffusion length and spin-dependent Hall coefficients in a semiconductor.
Original language | English (US) |
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Pages (from-to) | 7564-7566 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 89 |
Issue number | 11 II |
DOIs | |
State | Published - Jun 1 2001 |
Externally published | Yes |
Event | 8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States Duration: Jan 7 2001 → Jan 11 2001 |
ASJC Scopus subject areas
- General Physics and Astronomy