Abstract
A novel device for spin-current detection in semiconductors, based on the extraordinary Hall effect, is proposed. When a spin current is injected into a nonmagnetic semiconductor, it is found that a transverse electric field, or Hall voltage, is generated. The Hall voltage is proportional to the spin current in the nonmagnetic semiconductor. The proposed device can be used as a tool to investigate the fundamental spin-diffusion length and spin-dependent Hall coefficients in a semiconductor.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7564-7566 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 89 |
| Issue number | 11 II |
| DOIs | |
| State | Published - Jun 1 2001 |
| Event | 8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States Duration: Jan 7 2001 → Jan 11 2001 |
ASJC Scopus subject areas
- Physics and Astronomy(all)