Probing Intervalence Band Coupling via High-Harmonic Generation in Binary Zinc-Blende Semiconductors

Maria K. Hagen, Stephan W. Koch

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A systematic microscopic theory is presented for high-harmonic generation in III–V semiconductors that are excited by strongly detuned high-intensity electromagnetic pulses. As a mechanism for the appearance of even harmonic orders, the quantum interference of different transition paths is analyzed. For the binary zinc-blende semiconductors, InAs, InP, and GaAs, the intensity ratio between even- and odd-order harmonic emission depends on the strength of the respective intervalence band dipole coupling. However, the large intervalence band dipole in InP leads to even and odd harmonics of similar intensity, no or only very minor even-order emission due to quantum interference is predicted for InAs where the fundamental transition is strongly favored over intervalence band transitions.

Original languageEnglish (US)
Article number2100397
JournalPhysica Status Solidi - Rapid Research Letters
Issue number11
StatePublished - Nov 2021
Externally publishedYes


  • high-harmonic generation
  • intervalence band coupling
  • quantum interferences
  • semiconductor theory
  • strong-field excitation

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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